JPS5994476A - Photocoupler - Google Patents
PhotocouplerInfo
- Publication number
- JPS5994476A JPS5994476A JP58186411A JP18641183A JPS5994476A JP S5994476 A JPS5994476 A JP S5994476A JP 58186411 A JP58186411 A JP 58186411A JP 18641183 A JP18641183 A JP 18641183A JP S5994476 A JPS5994476 A JP S5994476A
- Authority
- JP
- Japan
- Prior art keywords
- region
- photocoupler
- phototransistor
- base
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 230000007257 malfunction Effects 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 101150107838 Capg gene Proteins 0.000 description 1
- 206010010219 Compulsions Diseases 0.000 description 1
- 101100440252 Xenopus laevis ncapg gene Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は発光ダイオードとホトトランジスタを１つのパ
ッケージに封入してなるホトカプラに関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a photocoupler in which a light emitting diode and a phototransistor are sealed in one package.
〈従来技術〉
ホトカプラにおいて、発光ダイオードとホトトランジス
タ間に急峻なパルス電圧が掛かると、ホトトランジスタ
が誤動作する現象はよく知られている。これは、発光ダ
イオードとホトトランジスタ間の容量による静電カップ
リングによるものである。<Prior Art> In a photocoupler, it is well known that when a steep pulse voltage is applied between a light emitting diode and a phototransistor, the phototransistor malfunctions. This is due to electrostatic coupling due to capacitance between the light emitting diode and the phototransistor.
第１図傾従来のホトトランジスタ側の構造を、第２図に
ホトカプラの等価回路を示す。Figure 1 shows the structure of a conventional phototransistor, and Figure 2 shows an equivalent circuit of a photocoupler.
発光ダイオードＬＥＤとホトトランジスタ間Ｔ間の容量
は、ホトトランジスタのＮ型コレクタ領域１の表面積に
比例する容量ＣａＰｃと、Ｐ＋型ベース領域２の表面積
に比例する容量ＣＧＰＢと、Ｎ＋型エミッタ領域３の表
面積に比例する容量Ｃａｐｇに分離できる。容量Ｃａｐ
ｃ、 ＣＧＰＢ、 Ｃａｐｚにおいて、最も重要なもの
はベース領域２の表面積に比例する容量ＣＧＦＢである
。なぜならば、容量ＣＧＰＢに対応する静電カンプリン
グがベース電流となり、ｈｐａ（一般にｈＦＥは１０〜
５０００）倍に増幅されるためである。The capacitance between the light emitting diode LED and the phototransistor T is a capacitance CaPc proportional to the surface area of the N type collector region 1 of the phototransistor, a capacitance CGPB proportional to the surface area of the P+ type base region 2, and a capacitance CGPB of the N+ type emitter region 3. It can be separated into a capacitance Capg proportional to the surface area. Capacity Cap
c, CGPB, Capz, the most important one is the capacitance CGFB, which is proportional to the surface area of the base region 2. This is because the electrostatic compulsion corresponding to the capacitance CGPB becomes the base current, and hpa (generally hFE is 10~
This is because the signal is amplified by a factor of 5,000).
〈発明の目的〉
本発明は、このような容量ＣＧＦＢを減少して、静電カ
ップリングによる誤動作を防止した構造のホトカプラを
提供するものである。<Objective of the Invention> The present invention provides a photocoupler having a structure in which such capacitance CGFB is reduced and malfunctions due to electrostatic coupling are prevented.
〈実施例〉
第３図に本発明ホトカプラのホトトランジスタの構造例
を示す。Ｎ型コレクタ領域１、Ｐ＋型ベース領域２、Ｎ
型エミツタ領域３０基本的構造は、第１図のものと同
じである。しかし、ここではベース領域２の主たる部分
を覆うように該嶺部にエミッタ領域３を形成している。<Example> FIG. 3 shows an example of the structure of a phototransistor of the photocoupler of the present invention. N type collector region 1, P+ type base region 2, N
The basic structure of the mold emitter region 30 is the same as that of FIG. However, here, the emitter region 3 is formed at the ridge so as to cover the main portion of the base region 2.
この結果、ベース領域２の表面積に比例する容量ＣＧＦ
Ｂは大幅に減少し、これに対応する静電カップリングに
よる影響は大幅に低減される。As a result, the capacitance CGF is proportional to the surface area of the base region 2.
B is significantly reduced and the corresponding effects due to electrostatic coupling are significantly reduced.
また図示のように、アルミニウム等の金属層４ヲ、コレ
クタ・ベース接合５とエミッタ・ベース接合６上にそれ
ぞれはみ出すよう形成し、エミッタ電極７等を介してエ
ミッタ領域３に接続すると更に効果的である。この場合
、ベース電極８以外のベース領域２の表面は、すべて実
質的にエミッタ領域３及び上記金属層４でシールドされ
ることになる。又、必要ならば、ベース電極８も省略し
てよい。Furthermore, as shown in the figure, it is more effective to form a metal layer 4 such as aluminum so as to protrude over the collector-base junction 5 and emitter-base junction 6, respectively, and connect it to the emitter region 3 via an emitter electrode 7 or the like. be. In this case, the entire surface of the base region 2 other than the base electrode 8 is substantially shielded by the emitter region 3 and the metal layer 4. Furthermore, if necessary, the base electrode 8 may also be omitted.
なお、エミッタ領域３は薄く、コレクターベース接合５
における充電流生成にはほとんど影響の力いようにでき
る。もちろん、エミッタ電極７も充分小さく、ベース領
域３での受光作用に支障はない。また、本発明は、ＮＰ
ＮＰ構造を有するホトサイリスタ、ホトトライアックに
も適用できる。Note that the emitter region 3 is thin and the collector base junction 5
It can be made to have little influence on charge current generation. Of course, the emitter electrode 7 is also sufficiently small, and there is no problem with the light receiving function in the base region 3. Moreover, the present invention also provides NP
It can also be applied to photothyristors and phototriacs having an NP structure.
〈発明の効果〉
以上のように本発明によれば、簡単な構造で、ホトカプ
ラにおける静電カップリングの影響を除去でき、急峻な
パルス電圧印加による誤動作をなくして有用なホトカプ
ラが提供できる。<Effects of the Invention> As described above, according to the present invention, the influence of electrostatic coupling in a photocoupler can be removed with a simple structure, and a useful photocoupler can be provided by eliminating malfunctions caused by application of a steep pulse voltage.
第１図は従来のホトトランジスタ側構造を示す断面図、
第２図はホトカプラの静電カップリングを説明する等価
回路、第３図は本発明の一実施例におけるホトトランジ
スタ側構造を有す断面図である。
１・・・コレクタ領域、２・・・ベース領域、３・・・
エミッタ領域、ＬＥＤ・・・発光ダイオード、ＰＴ・・
・ホトトランジスタ。Figure 1 is a cross-sectional view showing the structure of a conventional phototransistor side.
FIG. 2 is an equivalent circuit for explaining electrostatic coupling of a photocoupler, and FIG. 3 is a sectional view showing a structure on the phototransistor side in an embodiment of the present invention. 1... Collector area, 2... Base area, 3...
Emitter region, LED... light emitting diode, PT...
・Phototransistor.
Claims (1)
ージに封入して橙るホトカプラにおいて、ホトトランジ
スタのベース領域の主たる部分にエミッタ領域を形成し
てなることを特徴とするホトカプラ。1. An orange photocoupler in which a light emitting diode and a phototransistor are sealed in one package, characterized in that an emitter region is formed in a main portion of the base region of the phototransistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58186411A JPS5994476A (en) | 1983-10-03 | 1983-10-03 | Photocoupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58186411A JPS5994476A (en) | 1983-10-03 | 1983-10-03 | Photocoupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5994476A true JPS5994476A (en) | 1984-05-31 |
| JPS6329428B2 JPS6329428B2 (en) | 1988-06-14 |
Family
ID=16187944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58186411A Granted JPS5994476A (en) | 1983-10-03 | 1983-10-03 | Photocoupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994476A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195581A (en) * | 1984-10-16 | 1986-05-14 | Toshiba Corp | Photocoupler |
| JPH0575159A (en) * | 1991-09-18 | 1993-03-26 | Nec Corp | Optical semiconductor device |
| US5654559A (en) * | 1993-09-23 | 1997-08-05 | Siemens Aktiengesellschaft | Optical coupling device and method for manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4871583A (en) * | 1971-12-27 | 1973-09-27 |
-
1983
- 1983-10-03 JP JP58186411A patent/JPS5994476A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4871583A (en) * | 1971-12-27 | 1973-09-27 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195581A (en) * | 1984-10-16 | 1986-05-14 | Toshiba Corp | Photocoupler |
| JPH0224389B2 (en) * | 1984-10-16 | 1990-05-29 | Tokyo Shibaura Electric Co | |
| JPH0575159A (en) * | 1991-09-18 | 1993-03-26 | Nec Corp | Optical semiconductor device |
| US5654559A (en) * | 1993-09-23 | 1997-08-05 | Siemens Aktiengesellschaft | Optical coupling device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6329428B2 (en) | 1988-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5994476A (en) | Photocoupler | |
| JPS6216567A (en) | Light-receiving element incorporated in circuit | |
| JPS5819030A (en) | Optical coupling semiconductor device | |
| JPS58138080A (en) | Beam-condensing type solar cell | |
| JPS61107783A (en) | Semiconductor laser device | |
| JPH02310974A (en) | Semiconductor photodetector | |
| JPH0513070U (en) | Optically coupled semiconductor device | |
| JPS5737872A (en) | Semiconductor device | |
| JPS59127250U (en) | light sensor | |
| JPS584985A (en) | Photo-detecting element | |
| JPS5929057U (en) | Glass decorative body forming a solar cell | |
| JPH0371662U (en) | ||
| JPS5989203U (en) | Light emitting element sorting device | |
| JPS58162032U (en) | light detection circuit | |
| JPS5820553U (en) | semiconductor laser equipment | |
| JPS58120606U (en) | High voltage resistance pack | |
| JPS5944408U (en) | pulse sensor device | |
| JPS58189954U (en) | ionization smoke detector | |
| JPS56103435A (en) | Semiconductor device | |
| JPS60151155U (en) | semiconductor switching device | |
| JPS636669U (en) | ||
| JPH0493033A (en) | Transistor for power use | |
| JPS5866664U (en) | Buried structure semiconductor laser device | |
| JPS5839041U (en) | High voltage semiconductor device | |
| JPH0586678B2 (en) |