JPS5717188A - Semiconductor light-emitting element - Google Patents

Semiconductor light-emitting element

Info

Publication number
JPS5717188A
JPS5717188A JP9141880A JP9141880A JPS5717188A JP S5717188 A JPS5717188 A JP S5717188A JP 9141880 A JP9141880 A JP 9141880A JP 9141880 A JP9141880 A JP 9141880A JP S5717188 A JPS5717188 A JP S5717188A
Authority
JP
Japan
Prior art keywords
emitting element
electrode
light
semiconductor light
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9141880A
Other languages
Japanese (ja)
Inventor
Osamu Wada
Hisashi Hamaguchi
Masayuki Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9141880A priority Critical patent/JPS5717188A/en
Publication of JPS5717188A publication Critical patent/JPS5717188A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain the semiconductor light-emitting element, sensitivity and accuracy thereof are excellent, necessary space thereof is small and manufacture thereof is easy, by a method wherein an electrode is disposed to a metallic thin layer formed to one part of the surface of the light-emitting element, and an electrode is constituted between the electrode and one electrode of the light-emitting element. CONSTITUTION:The electrode is arranged to the metallic thin layer formed to one part of the surface of the light-emitting element, and a pair of the electrodes are constituted between the electrode and one electrode of the light-emitting element. For example, the negative electrodes 51 and the positive electrode 61 are formed to the light-emitting element with the double-heterogeneous structure of InP and InGaAsP. The metallic thin film 71 in Au, Al, etc. is shaped to one part of the surface of the light-emitting element, and a Schottky barrier 81 is constituted. Accordingly, the semiconductor light-emitting element, sensitivity and accuracy thereof are excellent, necessary space thereof is small and manufacture thereof is easy, can be obtained.
JP9141880A 1980-07-04 1980-07-04 Semiconductor light-emitting element Pending JPS5717188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9141880A JPS5717188A (en) 1980-07-04 1980-07-04 Semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9141880A JPS5717188A (en) 1980-07-04 1980-07-04 Semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPS5717188A true JPS5717188A (en) 1982-01-28

Family

ID=14025818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141880A Pending JPS5717188A (en) 1980-07-04 1980-07-04 Semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPS5717188A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140171A (en) * 1982-02-15 1983-08-19 Nec Corp Light-emitting diode
JPS6089990A (en) * 1983-10-21 1985-05-20 Sumitomo Electric Ind Ltd Optical integrated circuit
JP2001244551A (en) * 2000-02-28 2001-09-07 Sony Corp Pulsation laser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140171A (en) * 1982-02-15 1983-08-19 Nec Corp Light-emitting diode
JPS6089990A (en) * 1983-10-21 1985-05-20 Sumitomo Electric Ind Ltd Optical integrated circuit
JPH0426233B2 (en) * 1983-10-21 1992-05-06 Sumitomo Electric Industries
JP2001244551A (en) * 2000-02-28 2001-09-07 Sony Corp Pulsation laser

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