JPS57143888A - Electrode structure of semiconductor light emitting device - Google Patents

Electrode structure of semiconductor light emitting device

Info

Publication number
JPS57143888A
JPS57143888A JP2910081A JP2910081A JPS57143888A JP S57143888 A JPS57143888 A JP S57143888A JP 2910081 A JP2910081 A JP 2910081A JP 2910081 A JP2910081 A JP 2910081A JP S57143888 A JPS57143888 A JP S57143888A
Authority
JP
Japan
Prior art keywords
layer
type inp
type
current
electrode structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2910081A
Other languages
Japanese (ja)
Inventor
Ikuo Mito
Mitsuhiro Kitamura
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2910081A priority Critical patent/JPS57143888A/en
Publication of JPS57143888A publication Critical patent/JPS57143888A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Abstract

PURPOSE:To obtain the electrode structure having excellent electrical characteristics by laminating an InGaAsP active layer, the N type InP layer of a current pinched layer and the P type InGaAsP layer of an electrode forming layer onto an N type InP substrate and forming a diffusion region while penetrating the current pinched layer. CONSTITUTION:An N type InP buffer layer 2, the non-doped InGaAsP active layer 3 and a P type InP clad layer 4 are laminated onto the N type InP substrate 1, and the N type InP layer 5 forming the current pinched layer and the thin P type InGaAsP layer 11 shaping an ohmic contact are laminated. the striped P type selective diffusion region 7 is formed in depth penetrating the N type InP layer 5, and an ohmic electrode 10 at the P side of Ti-Pt-Au is shaped. Accordingly, the electrode structure, which inhibits ohmic resistance even in a narrow current injection region, thermal resistance thereof is small and the degradation of a semiconductor crystal thereof is little, can be formed.
JP2910081A 1981-02-27 1981-02-27 Electrode structure of semiconductor light emitting device Pending JPS57143888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2910081A JPS57143888A (en) 1981-02-27 1981-02-27 Electrode structure of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2910081A JPS57143888A (en) 1981-02-27 1981-02-27 Electrode structure of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS57143888A true JPS57143888A (en) 1982-09-06

Family

ID=12266920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2910081A Pending JPS57143888A (en) 1981-02-27 1981-02-27 Electrode structure of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57143888A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923575A (en) * 1982-07-30 1984-02-07 Fujitsu Ltd Semiconductor light emtting device
US5105234A (en) * 1988-11-29 1992-04-14 U.S. Philips Corporation Electroluminescent diode having a low capacitance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923575A (en) * 1982-07-30 1984-02-07 Fujitsu Ltd Semiconductor light emtting device
US5105234A (en) * 1988-11-29 1992-04-14 U.S. Philips Corporation Electroluminescent diode having a low capacitance

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