JPS57143888A - Electrode structure of semiconductor light emitting device - Google Patents
Electrode structure of semiconductor light emitting deviceInfo
- Publication number
- JPS57143888A JPS57143888A JP2910081A JP2910081A JPS57143888A JP S57143888 A JPS57143888 A JP S57143888A JP 2910081 A JP2910081 A JP 2910081A JP 2910081 A JP2910081 A JP 2910081A JP S57143888 A JPS57143888 A JP S57143888A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type inp
- type
- current
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain the electrode structure having excellent electrical characteristics by laminating an InGaAsP active layer, the N type InP layer of a current pinched layer and the P type InGaAsP layer of an electrode forming layer onto an N type InP substrate and forming a diffusion region while penetrating the current pinched layer. CONSTITUTION:An N type InP buffer layer 2, the non-doped InGaAsP active layer 3 and a P type InP clad layer 4 are laminated onto the N type InP substrate 1, and the N type InP layer 5 forming the current pinched layer and the thin P type InGaAsP layer 11 shaping an ohmic contact are laminated. the striped P type selective diffusion region 7 is formed in depth penetrating the N type InP layer 5, and an ohmic electrode 10 at the P side of Ti-Pt-Au is shaped. Accordingly, the electrode structure, which inhibits ohmic resistance even in a narrow current injection region, thermal resistance thereof is small and the degradation of a semiconductor crystal thereof is little, can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2910081A JPS57143888A (en) | 1981-02-27 | 1981-02-27 | Electrode structure of semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2910081A JPS57143888A (en) | 1981-02-27 | 1981-02-27 | Electrode structure of semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57143888A true JPS57143888A (en) | 1982-09-06 |
Family
ID=12266920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2910081A Pending JPS57143888A (en) | 1981-02-27 | 1981-02-27 | Electrode structure of semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57143888A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5923575A (en) * | 1982-07-30 | 1984-02-07 | Fujitsu Ltd | Semiconductor light emtting device |
US5105234A (en) * | 1988-11-29 | 1992-04-14 | U.S. Philips Corporation | Electroluminescent diode having a low capacitance |
-
1981
- 1981-02-27 JP JP2910081A patent/JPS57143888A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5923575A (en) * | 1982-07-30 | 1984-02-07 | Fujitsu Ltd | Semiconductor light emtting device |
US5105234A (en) * | 1988-11-29 | 1992-04-14 | U.S. Philips Corporation | Electroluminescent diode having a low capacitance |
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