JPS57118687A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS57118687A
JPS57118687A JP562181A JP562181A JPS57118687A JP S57118687 A JPS57118687 A JP S57118687A JP 562181 A JP562181 A JP 562181A JP 562181 A JP562181 A JP 562181A JP S57118687 A JPS57118687 A JP S57118687A
Authority
JP
Japan
Prior art keywords
layer
inp
side electrode
doped
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP562181A
Other languages
Japanese (ja)
Inventor
Hideaki Nishizawa
Yukihiro Sasaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP562181A priority Critical patent/JPS57118687A/en
Publication of JPS57118687A publication Critical patent/JPS57118687A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Abstract

PURPOSE:To stabilize a single transverse mode oscillation by a method wherein a protrusion-provided chemical semiconductor substrate is covered with multiple layers alternately of reverse conductivity and then subjected to high temperatures for internal diffusion causing the layers to be coupled partially and selectively. CONSTITUTION:A ridge shaped mesa is formed on a p-InP substrate 30 and an undoped InP layer 31 is provided. Heat treatment is effected after the formation of a p-Zn doped InP32, which results in the formation of a Zn diffused region 38. The Inp layer 32 is clad with a undoped InGaAsP active layer 33, a p-Sn doped Inp clad layer 34, and then with an n-Te doped InGaAs ohmic contact layer 35. On the uppermost layer, an n side electrode 37 is formed and covering the other side of the substrate 30 is a p side electrode 36. Supply of a positive voltage to the p side electrode 36 causes an electric current to flow concentratedly in the vicinity of the stripes and the light emitting region 300 will occupy but only on a limited part just over the region wherein the stripes are most concentrated.
JP562181A 1981-01-16 1981-01-16 Manufacture of semiconductor laser Pending JPS57118687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP562181A JPS57118687A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP562181A JPS57118687A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57118687A true JPS57118687A (en) 1982-07-23

Family

ID=11616236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP562181A Pending JPS57118687A (en) 1981-01-16 1981-01-16 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57118687A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200485A (en) * 1983-04-15 1984-11-13 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and method of producing same
JPS6042889A (en) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp Semiconductor laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture
JPS55158689A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture
JPS55158689A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200485A (en) * 1983-04-15 1984-11-13 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and method of producing same
JPS6042889A (en) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp Semiconductor laser

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