JPS5712580A - Manufacture of semiconductor light-emitting device - Google Patents

Manufacture of semiconductor light-emitting device

Info

Publication number
JPS5712580A
JPS5712580A JP8703980A JP8703980A JPS5712580A JP S5712580 A JPS5712580 A JP S5712580A JP 8703980 A JP8703980 A JP 8703980A JP 8703980 A JP8703980 A JP 8703980A JP S5712580 A JPS5712580 A JP S5712580A
Authority
JP
Japan
Prior art keywords
layer
stripe
manufacture
ingaasp
ohmic electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8703980A
Other languages
Japanese (ja)
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8703980A priority Critical patent/JPS5712580A/en
Publication of JPS5712580A publication Critical patent/JPS5712580A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To contrive to reduce the process of manufacture, to simplify the process as well as to increase the yield rate of products by a method wherein a semiconductor laser of buried heterostructure, having a current concentrating construction, is formed one process of epitaxial growth. CONSTITUTION:A mesa stripe 30, having the stripe width in parallel with the prescribed direction, is formed on the surface of an N type InP substrate 10 and a stripe-formed active layer photo waveguide passage region 16 is formed on an InGaAsP layer 12 in such manner that it is separable from the upper section of the stripe 30 when laminated on an InGaAsP layer 12. This region 16 is formed in such manner that it is surrounded by N type InP layers 11 and 12, an N type InP layer 13 and a P type layer 14. Also, a P type InGaAsP 15 as a final epitaxial layer is laminated, an Au-ZnP side ohmic electrode 8 is formed on the layer 15 and Au-Znn side ohmic electrode 9 is formed on the substrate 10. Then, the electrode resistance of the ohmic electrode 8 is reduced, its current concentration is increased and, at the same time, a semiconductor light-emitting device is formed by performing only one epitaxial growth, thereby enabling to simplify the process of manufacture.
JP8703980A 1980-06-26 1980-06-26 Manufacture of semiconductor light-emitting device Pending JPS5712580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8703980A JPS5712580A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8703980A JPS5712580A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
JPS5712580A true JPS5712580A (en) 1982-01-22

Family

ID=13903799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8703980A Pending JPS5712580A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor light-emitting device

Country Status (1)

Country Link
JP (1) JPS5712580A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125686A (en) * 1983-01-06 1984-07-20 Nec Corp Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125686A (en) * 1983-01-06 1984-07-20 Nec Corp Semiconductor laser
JPH0449791B2 (en) * 1983-01-06 1992-08-12 Nippon Electric Co

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