JPS5591892A - Semiconductor laser light emission device - Google Patents

Semiconductor laser light emission device

Info

Publication number
JPS5591892A
JPS5591892A JP16478578A JP16478578A JPS5591892A JP S5591892 A JPS5591892 A JP S5591892A JP 16478578 A JP16478578 A JP 16478578A JP 16478578 A JP16478578 A JP 16478578A JP S5591892 A JPS5591892 A JP S5591892A
Authority
JP
Japan
Prior art keywords
electrodes
stripe
light emission
current
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16478578A
Other languages
Japanese (ja)
Inventor
Hiroshi Ishikawa
Takao Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16478578A priority Critical patent/JPS5591892A/en
Publication of JPS5591892A publication Critical patent/JPS5591892A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To make it possible to move the part in which laser oscillation occurs by forming a pair of stripe electrodes on a stripe active region and varying the current flowing these electrodes.
CONSTITUTION: An n-type GaAlAs clad layer 2, p-type GaAlAs active layer 3, and p-type GaAlAs clad layer 4 are formed in succession on GaAs substrate 1 provided with a stripe groove. On top of this are placed a pair of stripe electrodes 7, 7'. A p-type regions 6, 6', which become the contact region of electrodes 7, 7', are provided only under electrodes 7, 7'. When stripe electrodes 7, 7' arranged not parallel to each other as shown in the drawing and the current is varied, the light emitting portion can be moved to the right and left. When electrodes 7, 7' are arranged parallel to each other and the current is varied, the light emission unit can be moved in the direction of its width in the strip light emission region.
COPYRIGHT: (C)1980,JPO&Japio
JP16478578A 1978-12-28 1978-12-28 Semiconductor laser light emission device Pending JPS5591892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16478578A JPS5591892A (en) 1978-12-28 1978-12-28 Semiconductor laser light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16478578A JPS5591892A (en) 1978-12-28 1978-12-28 Semiconductor laser light emission device

Publications (1)

Publication Number Publication Date
JPS5591892A true JPS5591892A (en) 1980-07-11

Family

ID=15799894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16478578A Pending JPS5591892A (en) 1978-12-28 1978-12-28 Semiconductor laser light emission device

Country Status (1)

Country Link
JP (1) JPS5591892A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162483A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
JPS57164591A (en) * 1981-04-01 1982-10-09 Fujitsu Ltd Photosemiconductor device
JPS60235489A (en) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd Semiconductor laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339142A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Photo deflecting element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339142A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Photo deflecting element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162483A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
JPS57164591A (en) * 1981-04-01 1982-10-09 Fujitsu Ltd Photosemiconductor device
JPS60235489A (en) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd Semiconductor laser device

Similar Documents

Publication Publication Date Title
JPS5286093A (en) Striped semiconductor laser
JPS5591892A (en) Semiconductor laser light emission device
JPS52106283A (en) Semiconductor laser unit
JPS55153385A (en) Current squeezing type semiconductor device
JPS56142691A (en) Semiconductor light emitting device
JPS55127015A (en) Photo semiconductor device
JPS5596694A (en) Semiconductor laser device and method of fabricating the same
JPS537187A (en) Production of semiconductor laser device
JPS5727095A (en) Semiconductor light emitting device
JPS54159891A (en) Semiconductor laser device and its production
JPS5329687A (en) Semiconductor light emitting device and its production
JPS5456385A (en) Wavelength variable distribution feedback type semiconductor laser device
JPS54159892A (en) Semiconductor laser device and its production
JPS52106282A (en) Semiconductor laser unit
JPS5289079A (en) Semiconductor hetero junction laser
JPS5799792A (en) Semiconductor laser device
JPS6418293A (en) Semiconductor laser device
JPS54113285A (en) Semiconductor luminous element
JPS5638885A (en) Light emission semiconductor device
JPS6476784A (en) Edge light-emitting diode
JPS5727094A (en) Semiconductor light emitting device
JPS57118687A (en) Manufacture of semiconductor laser
JPS57139986A (en) Manufacure of semiconductor laser
JPS5356987A (en) Semiconductor laser device
JPS52129390A (en) Production of semiconductor light emitting element