JPS5799792A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5799792A
JPS5799792A JP17672480A JP17672480A JPS5799792A JP S5799792 A JPS5799792 A JP S5799792A JP 17672480 A JP17672480 A JP 17672480A JP 17672480 A JP17672480 A JP 17672480A JP S5799792 A JPS5799792 A JP S5799792A
Authority
JP
Japan
Prior art keywords
layers
current
layer
junction
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17672480A
Other languages
Japanese (ja)
Inventor
Shigeki Horiuchi
Kenichi Yamanaka
Kaname Otaki
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17672480A priority Critical patent/JPS5799792A/en
Publication of JPS5799792A publication Critical patent/JPS5799792A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make LASER oscillation with a low threshold current, by nullifying invalid current not contributing to LASER oscillation, and concentrating the whole current to a region where LASER is oscillated. CONSTITUTION:AlGaAs and GaAs are accumulated as designated on a GaAs substrate 1 as usual, and a V-groove 7 is formed. Zn is diffused on a surface narow in width including the groove 7. A P layer 8a is formed penetrating through an N type AlGaAs layer 5 and reaching a P type AlGaAs layer 4. Another Zn is diffused and P layers 11a, 11b are formed penetrating through a P type GaAs active layter 3 and reaching an N type AlGaAs layer 2. The junction between layers 2 and 3 under the groove 7 is formed with a narrow interval. An electrode 9a is attached on the layers 11a, 11b via an insulating film 12. The diffusion potential between P layers 11a, 11b and the N layer 2 is higher than that of narrow P-N junction between layers 3 and 2. Therefore, current is concentrated to the narrow junction. The LASER oscillation is performed efficiently with decrease of invalid current and with threshold current lower than before.
JP17672480A 1980-12-11 1980-12-11 Semiconductor laser device Pending JPS5799792A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17672480A JPS5799792A (en) 1980-12-11 1980-12-11 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17672480A JPS5799792A (en) 1980-12-11 1980-12-11 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5799792A true JPS5799792A (en) 1982-06-21

Family

ID=16018664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17672480A Pending JPS5799792A (en) 1980-12-11 1980-12-11 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5799792A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19505949A1 (en) * 1994-02-22 1995-08-24 Mitsubishi Electric Corp Semiconductor laser and method for producing a semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19505949A1 (en) * 1994-02-22 1995-08-24 Mitsubishi Electric Corp Semiconductor laser and method for producing a semiconductor laser

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