JPS6461082A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS6461082A JPS6461082A JP21865587A JP21865587A JPS6461082A JP S6461082 A JPS6461082 A JP S6461082A JP 21865587 A JP21865587 A JP 21865587A JP 21865587 A JP21865587 A JP 21865587A JP S6461082 A JPS6461082 A JP S6461082A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- laser radiation
- active layer
- moves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To decrease the absorption loss of laser radiation, by determining the amount of impurities under the condition so that absorbing coefficient for laser radiation, which moves from an oscillating region to a non-current-injection region depending on the conductivity of an active layer, is made small. CONSTITUTION:On a P-type GaAs substrate, a P-type AlGaAs clad layer 12, a GaAs layer 13, an N-type AlGaAs clad layer 14 and an N-type GaAs cap layer are laminated. At this time, the amount of impurities in the active layer 13 is selected under the following condition: absorption coefficient for laser radiation, which moves from an oscillating region 13b to a non-current-injection region 13a depending on the conductivity type of the active layer 13, is made small.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21865587A JPS6461082A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21865587A JPS6461082A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461082A true JPS6461082A (en) | 1989-03-08 |
Family
ID=16723348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21865587A Pending JPS6461082A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461082A (en) |
-
1987
- 1987-09-01 JP JP21865587A patent/JPS6461082A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS55165691A (en) | Compound semiconductor laser element | |
| JPS5269285A (en) | Semiconductor laser device | |
| JPS568890A (en) | Semiconductor laser and manufacture thereof | |
| JPS6461082A (en) | Semiconductor laser element | |
| JPS55140286A (en) | Buried heterogeneous structure semiconductor for use in laser | |
| JPS5524460A (en) | Semiconductor laser system | |
| JPS5763885A (en) | Semiconductor laser device | |
| JPS5799792A (en) | Semiconductor laser device | |
| JPS57167688A (en) | Multiwavelength light-emitting and light-receiving element | |
| JPS5356987A (en) | Semiconductor laser device | |
| JPS52106284A (en) | Semiconductor laser unit | |
| JPS5591893A (en) | Semiconductor laser having a light-guide | |
| JPS52106282A (en) | Semiconductor laser unit | |
| JPS57139986A (en) | Manufacure of semiconductor laser | |
| JPS5578580A (en) | Manufacture of semiconductor light-emitting diode | |
| JPS5425686A (en) | Semiconductor junction laser | |
| JPS6410690A (en) | Semiconductor laser device and manufacture thereof | |
| JPS5518037A (en) | Semiconductor laser | |
| JPS6486585A (en) | Semiconductor laser element | |
| JPS559480A (en) | Large light output, lateral mode of semiconductor laser element | |
| JPS5789287A (en) | Semiconductor laser element | |
| JPS57112090A (en) | Semiconductor laser | |
| JPS57170583A (en) | Semiconductor laser device | |
| JPS647582A (en) | Photosemiconductor device | |
| JPS5398790A (en) | Semiconductor light emitting element |