JPS57170583A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57170583A
JPS57170583A JP5554681A JP5554681A JPS57170583A JP S57170583 A JPS57170583 A JP S57170583A JP 5554681 A JP5554681 A JP 5554681A JP 5554681 A JP5554681 A JP 5554681A JP S57170583 A JPS57170583 A JP S57170583A
Authority
JP
Japan
Prior art keywords
laser
active region
layer
laser lights
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5554681A
Other languages
Japanese (ja)
Inventor
Hisao Nakajima
Junichi Umeda
Takaro Kuroda
Takashi Kajimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5554681A priority Critical patent/JPS57170583A/en
Publication of JPS57170583A publication Critical patent/JPS57170583A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Abstract

PURPOSE:To obtain a laser which discharges in lateral and longitudinal modes manner from an active region by mutually interfering laser lights from active regions aligned at a suitable interval. CONSTITUTION:An n type Ga0.7Al0.3As 2 and no-additive GaAs 3 are grown on an n-GaAs substrate 1, ruggedness is formed on the layer 3, an interval from the adjacent active region is set less than 5mum, and laser lights immersed to the outside of the active region are mutually interfered. A p type Ga0.7Al0.3As 4 is laminated on the layer 3, an AuGeNi 6 is attached to the substrate 1 side, and a Cr-Au 6 is attached onto the layer 4, is cleaved and scribed, thereby completing a laser. According to this structure, the laser oscillation at every active region can be maintained by the mutual interference of the laser lights in the same wavelength in the prescribed relation of the phases. Further, since the active regions are plural, large power operation can be performed.
JP5554681A 1981-04-15 1981-04-15 Semiconductor laser device Pending JPS57170583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5554681A JPS57170583A (en) 1981-04-15 1981-04-15 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5554681A JPS57170583A (en) 1981-04-15 1981-04-15 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS57170583A true JPS57170583A (en) 1982-10-20

Family

ID=13001699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5554681A Pending JPS57170583A (en) 1981-04-15 1981-04-15 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57170583A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222188A (en) * 1985-02-28 1986-10-02 Sharp Corp Semiconductor laser array element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222188A (en) * 1985-02-28 1986-10-02 Sharp Corp Semiconductor laser array element

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