JPS5646588A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5646588A JPS5646588A JP12269879A JP12269879A JPS5646588A JP S5646588 A JPS5646588 A JP S5646588A JP 12269879 A JP12269879 A JP 12269879A JP 12269879 A JP12269879 A JP 12269879A JP S5646588 A JPS5646588 A JP S5646588A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor laser
- layer
- high frequency
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12269879A JPS5646588A (en) | 1979-09-26 | 1979-09-26 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12269879A JPS5646588A (en) | 1979-09-26 | 1979-09-26 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5646588A true JPS5646588A (en) | 1981-04-27 |
JPS6124837B2 JPS6124837B2 (en) | 1986-06-12 |
Family
ID=14842391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12269879A Granted JPS5646588A (en) | 1979-09-26 | 1979-09-26 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5646588A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0128297A2 (en) * | 1983-04-11 | 1984-12-19 | Nec Corporation | Frequency-stabilized semiconductor laser oscillator |
JPS63194385A (en) * | 1987-02-09 | 1988-08-11 | Fujitsu Ltd | Semiconductor light-emitting device |
US4845723A (en) * | 1987-02-20 | 1989-07-04 | Siemens Aktiengesellschaft | Laser transmitter arrangement |
US5848084A (en) * | 1995-08-25 | 1998-12-08 | Fujitsu Limited | Semiconductor light source for an optical transmitter and an optical transmission module using the semiconductor light source |
-
1979
- 1979-09-26 JP JP12269879A patent/JPS5646588A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0128297A2 (en) * | 1983-04-11 | 1984-12-19 | Nec Corporation | Frequency-stabilized semiconductor laser oscillator |
US4669086A (en) * | 1983-04-11 | 1987-05-26 | Nec Corporation | Frequency-stabilized semiconductor laser oscillator |
EP0128297A3 (en) * | 1983-04-11 | 1988-03-02 | Nec Corporation | Frequency-stabilized semiconductor laser oscillator |
JPS63194385A (en) * | 1987-02-09 | 1988-08-11 | Fujitsu Ltd | Semiconductor light-emitting device |
US4845723A (en) * | 1987-02-20 | 1989-07-04 | Siemens Aktiengesellschaft | Laser transmitter arrangement |
US5848084A (en) * | 1995-08-25 | 1998-12-08 | Fujitsu Limited | Semiconductor light source for an optical transmitter and an optical transmission module using the semiconductor light source |
Also Published As
Publication number | Publication date |
---|---|
JPS6124837B2 (en) | 1986-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5646588A (en) | Semiconductor laser device | |
GB708899A (en) | Improvements in or relating to electric rectifying devices employing semiconductors | |
JPS5493380A (en) | Semiconductor light emitting device | |
JPS6417487A (en) | Semiconductor laser device | |
JPS57124489A (en) | Two wavelength semiconductor light emitting element | |
JPS6461084A (en) | Semiconductor laser | |
JPS56152289A (en) | Stripe type semiconductor laser with gate electrode | |
JPS5766685A (en) | Rib structure semiconductor laser | |
JPS57145385A (en) | Method for generating light pulse train | |
JPS55153388A (en) | Semiconductor laser device for oscillating multiple wavelength | |
JPS57162382A (en) | Semiconductor laser | |
JPS5643789A (en) | Semiconductor laser | |
JPS57169290A (en) | Photopulse modulating device | |
GB1267085A (en) | ||
JPS6457785A (en) | Semiconductor laser device | |
JPS5712587A (en) | Hetero-structure semiconductor laser | |
SU649342A3 (en) | Stepped voltage shaper | |
JPS57172790A (en) | Semiconductor laser device | |
JPS5618483A (en) | Laser diode | |
JPS56142689A (en) | Semiconductor laser | |
JPS6490578A (en) | Manufacture of semiconductor laser device | |
JPS5763880A (en) | Lateral distribution feedback type semiconductor laser | |
JPS6154277B2 (en) | ||
JPS57170583A (en) | Semiconductor laser device | |
JPH06177476A (en) | Optical pulse generator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Effective date: 20050131 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060815 |
|
A601 | Written request for extension of time |
Effective date: 20061114 Free format text: JAPANESE INTERMEDIATE CODE: A601 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070105 |
|
A521 | Written amendment |
Effective date: 20070215 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
A131 | Notification of reasons for refusal |
Effective date: 20070424 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070723 |
|
A602 | Written permission of extension of time |
Effective date: 20070910 Free format text: JAPANESE INTERMEDIATE CODE: A602 |
|
A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20071205 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080122 |