JPS5646588A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5646588A
JPS5646588A JP12269879A JP12269879A JPS5646588A JP S5646588 A JPS5646588 A JP S5646588A JP 12269879 A JP12269879 A JP 12269879A JP 12269879 A JP12269879 A JP 12269879A JP S5646588 A JPS5646588 A JP S5646588A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor laser
layer
high frequency
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12269879A
Other languages
Japanese (ja)
Other versions
JPS6124837B2 (en
Inventor
Kenichi Sato
Koichi Asatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12269879A priority Critical patent/JPS5646588A/en
Publication of JPS5646588A publication Critical patent/JPS5646588A/en
Publication of JPS6124837B2 publication Critical patent/JPS6124837B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a multiaxis mode oscillation of a semiconductor laser device by a single lateral mode by spatially dividing at least one of two electrodes forming a semiconductor laser into a plurality of segments and applying a voltage having sufficiently high frequency as compared with the upper limit of the frequency of modulation signal to any of the segments. CONSTITUTION:An N type GaAlAs layer 5, an active layer 4 and a P type GaAl As layer 3 are laminated on an N type GaAs substrate 6, and are epitaxially grown as a semiconductor laser 1. When there are then formed one electrode on the layer 3 and other electrode on the back surface of the substrate, the electrode 7 formed on the back surface of the substrate 6 is covered on the whole surface, and the electrode formed on the layer 3 is divided spatially longitudinally into two segment electrodes 8, 9. Thereafter, bias and modulation signal voltage having an upper limit frequency f1 are applied from the semiconductor laser modulator circuit 10 to the electrode 9, and a high frequency voltage having sufficiently high frequency f2 as compared with the frequency f1 is applied from a high frequency power supply 11 to the electrode 8.
JP12269879A 1979-09-26 1979-09-26 Semiconductor laser device Granted JPS5646588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12269879A JPS5646588A (en) 1979-09-26 1979-09-26 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12269879A JPS5646588A (en) 1979-09-26 1979-09-26 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS5646588A true JPS5646588A (en) 1981-04-27
JPS6124837B2 JPS6124837B2 (en) 1986-06-12

Family

ID=14842391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12269879A Granted JPS5646588A (en) 1979-09-26 1979-09-26 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5646588A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0128297A2 (en) * 1983-04-11 1984-12-19 Nec Corporation Frequency-stabilized semiconductor laser oscillator
JPS63194385A (en) * 1987-02-09 1988-08-11 Fujitsu Ltd Semiconductor light-emitting device
US4845723A (en) * 1987-02-20 1989-07-04 Siemens Aktiengesellschaft Laser transmitter arrangement
US5848084A (en) * 1995-08-25 1998-12-08 Fujitsu Limited Semiconductor light source for an optical transmitter and an optical transmission module using the semiconductor light source

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0128297A2 (en) * 1983-04-11 1984-12-19 Nec Corporation Frequency-stabilized semiconductor laser oscillator
US4669086A (en) * 1983-04-11 1987-05-26 Nec Corporation Frequency-stabilized semiconductor laser oscillator
EP0128297A3 (en) * 1983-04-11 1988-03-02 Nec Corporation Frequency-stabilized semiconductor laser oscillator
JPS63194385A (en) * 1987-02-09 1988-08-11 Fujitsu Ltd Semiconductor light-emitting device
US4845723A (en) * 1987-02-20 1989-07-04 Siemens Aktiengesellschaft Laser transmitter arrangement
US5848084A (en) * 1995-08-25 1998-12-08 Fujitsu Limited Semiconductor light source for an optical transmitter and an optical transmission module using the semiconductor light source

Also Published As

Publication number Publication date
JPS6124837B2 (en) 1986-06-12

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