JPS6461084A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6461084A JPS6461084A JP21871087A JP21871087A JPS6461084A JP S6461084 A JPS6461084 A JP S6461084A JP 21871087 A JP21871087 A JP 21871087A JP 21871087 A JP21871087 A JP 21871087A JP S6461084 A JPS6461084 A JP S6461084A
- Authority
- JP
- Japan
- Prior art keywords
- width
- regions
- layer
- specified
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain high output power and to enhance the yield rate of devices without imparing the characteristics of a basic lateral mode, by providing a regions, each having a specified length and a specified width, which is wider than the maximum width of each region having a wide width, at edge face parts. CONSTITUTION:On an n-type GaAs substrate 1, an n-type AlxGa1-xAs layer 2, an AlyGa1-yAs layer 3, a p-type AlxGa1-xAs layer 4 and a p-type GaAs layer 5 are laminated. A region 6 having an narrow width for obtaining a basic lateral mode is formed. Regions 7 and 8 each having a gradually expanding width are formed so as to obtain high output power. Regions 9 and 10 each having a specified length and a specified width, which is wider than the maximum width of each of the regions 7 and 8 having the expanding widths, are provided at edge face parts. Thus, an active region is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21871087A JPS6461084A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21871087A JPS6461084A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461084A true JPS6461084A (en) | 1989-03-08 |
Family
ID=16724217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21871087A Pending JPS6461084A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461084A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0567845A (en) * | 1991-03-15 | 1993-03-19 | Tokyo Inst Of Technol | Optical amplifier |
| JPH06196799A (en) * | 1992-10-30 | 1994-07-15 | Nec Corp | Distributed-feedback semiconductor laser |
| US6768758B1 (en) | 1999-05-13 | 2004-07-27 | Nec Corporation | Semiconductor laser, semiconductor optical amplifier, and production method thereof |
| US7542500B2 (en) | 2006-09-07 | 2009-06-02 | Panasonic Corporation | Semiconductor laser device |
| JP2011054677A (en) * | 2009-08-31 | 2011-03-17 | Toshiba Corp | Semiconductor light-emitting device |
| WO2016063605A1 (en) * | 2014-10-23 | 2016-04-28 | ソニー株式会社 | Optical semiconductor element and laser device assembly |
-
1987
- 1987-09-01 JP JP21871087A patent/JPS6461084A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0567845A (en) * | 1991-03-15 | 1993-03-19 | Tokyo Inst Of Technol | Optical amplifier |
| JPH06196799A (en) * | 1992-10-30 | 1994-07-15 | Nec Corp | Distributed-feedback semiconductor laser |
| US6768758B1 (en) | 1999-05-13 | 2004-07-27 | Nec Corporation | Semiconductor laser, semiconductor optical amplifier, and production method thereof |
| US7542500B2 (en) | 2006-09-07 | 2009-06-02 | Panasonic Corporation | Semiconductor laser device |
| JP2011054677A (en) * | 2009-08-31 | 2011-03-17 | Toshiba Corp | Semiconductor light-emitting device |
| WO2016063605A1 (en) * | 2014-10-23 | 2016-04-28 | ソニー株式会社 | Optical semiconductor element and laser device assembly |
| JPWO2016063605A1 (en) * | 2014-10-23 | 2017-08-03 | ソニー株式会社 | Optical semiconductor device and laser device assembly |
| US10109980B2 (en) | 2014-10-23 | 2018-10-23 | Sony Corporation | Optical semiconductor element and laser device assembly |
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