JPS55151384A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS55151384A
JPS55151384A JP5991779A JP5991779A JPS55151384A JP S55151384 A JPS55151384 A JP S55151384A JP 5991779 A JP5991779 A JP 5991779A JP 5991779 A JP5991779 A JP 5991779A JP S55151384 A JPS55151384 A JP S55151384A
Authority
JP
Japan
Prior art keywords
layer
type electrode
semiconductor laser
laser element
laminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5991779A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Toshiro Hayakawa
Morichika Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5991779A priority Critical patent/JPS55151384A/en
Publication of JPS55151384A publication Critical patent/JPS55151384A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To increase the losses at both sides of a stripe of a semiconductor laser element and to prevent the expansion of lateral mode therein by forming absorbers for the light at both sides of the stripe structure. CONSTITUTION:The first layer 1 made of n-Ga1-xAlxAs layer, the second layer 2 made of n-Ga1-yAlyAs layer, the third layer 3 made of p-Ga1-xAlxAs layer and the fourth layer 4 made of p-GaAs layer are sequentially epitaxially grown to form a laminate. The second layer 2 corresponds to a laser oscillation active layer. An n-GaAs substrate 5 is grown at the first layer 1 of the laminate as growing substrate, and the first layer 1 side is formed with recess at the junction surface of the first layer 1. p-Type electrode 6 and n-type electrode 7 are formed at the fourth layer 4 and the n-type GaAs substrate 5 side, an insulating layer 8 is interposed between the fourth layer 4 and the p-type electrode 6 side, and oxide stripe structure is formed to form a current concentrating mechanism.
JP5991779A 1979-05-15 1979-05-15 Semiconductor laser element Pending JPS55151384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5991779A JPS55151384A (en) 1979-05-15 1979-05-15 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5991779A JPS55151384A (en) 1979-05-15 1979-05-15 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS55151384A true JPS55151384A (en) 1980-11-25

Family

ID=13126955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5991779A Pending JPS55151384A (en) 1979-05-15 1979-05-15 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS55151384A (en)

Similar Documents

Publication Publication Date Title
JPS5640292A (en) Semiconductor laser
JPS5681994A (en) Field effect type semiconductor laser and manufacture thereof
JPS55151384A (en) Semiconductor laser element
JPS6461084A (en) Semiconductor laser
JPS5766685A (en) Rib structure semiconductor laser
JPS6451671A (en) Solar cell
JPS5618484A (en) Manufacture of semiconductor laser
JPS54107284A (en) Semiconductor junction laser and its production
JPS54126489A (en) Stripe structure of semiconductor laser element
JPS55125690A (en) Semiconductor laser
JPS57139986A (en) Manufacure of semiconductor laser
JPS56134792A (en) Semiconductor laser device
JPH0682886B2 (en) Method of manufacturing semiconductor laser device
JPH0195583A (en) Buried-type semiconductor laser device
JPS647586A (en) Semiconductor laser and manufacture thereof
JPH03203282A (en) Semiconductor laser diode
KR960043387A (en) Compound Semiconductor Laser Diode and Manufacturing Method Thereof
JPS55153383A (en) Semiconductor hetero junction laser
JPS57136385A (en) Manufacture of semiconductor laser
JPS5612792A (en) Semiconductor laser element and manufacture therefor
JPS55123189A (en) Manufacture of semiconductor laser
JPS6450591A (en) Semiconductor device and manufacture thereof
JPS6490582A (en) Semiconductor laser
JPS63202986A (en) Semiconductor laser device
JPS5527622A (en) Semiconductor laser manufacturing method