JPS5527622A - Semiconductor laser manufacturing method - Google Patents

Semiconductor laser manufacturing method

Info

Publication number
JPS5527622A
JPS5527622A JP10057178A JP10057178A JPS5527622A JP S5527622 A JPS5527622 A JP S5527622A JP 10057178 A JP10057178 A JP 10057178A JP 10057178 A JP10057178 A JP 10057178A JP S5527622 A JPS5527622 A JP S5527622A
Authority
JP
Japan
Prior art keywords
layer
type
junction
molecular beam
algaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10057178A
Other languages
Japanese (ja)
Inventor
Toshio Murotani
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10057178A priority Critical patent/JPS5527622A/en
Publication of JPS5527622A publication Critical patent/JPS5527622A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To lower the threshold current of laser oscillation, by making an active layer thin by using the molecular beam epitaxial method, and at the same time, by producing laser oscillation by injecting a carrier through a PN homojunction. CONSTITUTION:By the molecular beam epitaxial method, a molecular beam grown wafer is formed, consisting of N-type AlGaAs layer 10 and 12 which are to become light-sealing layers, N-type GaAs layer 11, which is to become an active layer, and N-type GaAs layer 13, which is to become an ohmic contact layer. Next, by diffusing P-type dopant so that it expands from the surface of the left half of layer 13 to the major part of base 1a, PN GaAs homojunction 19 is formed on the junction of layer 11 and P-type GaAs layer 16. At the same time, PN AlGaAs homojunctions 20 and 21 are formed respectively on the junction of layer 10 and P-type AlGaAs layer 15 and the junction of layer 12 and P-type AlGaAs layer 17. Then, layer 13 and layer 18 are separated, and an electrode is formed for each.
JP10057178A 1978-08-17 1978-08-17 Semiconductor laser manufacturing method Pending JPS5527622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10057178A JPS5527622A (en) 1978-08-17 1978-08-17 Semiconductor laser manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10057178A JPS5527622A (en) 1978-08-17 1978-08-17 Semiconductor laser manufacturing method

Publications (1)

Publication Number Publication Date
JPS5527622A true JPS5527622A (en) 1980-02-27

Family

ID=14277584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10057178A Pending JPS5527622A (en) 1978-08-17 1978-08-17 Semiconductor laser manufacturing method

Country Status (1)

Country Link
JP (1) JPS5527622A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073895A (en) * 1990-04-18 1991-12-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073895A (en) * 1990-04-18 1991-12-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser

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