JPS5518087A - Semiconductor laser device and manufacture thereof - Google Patents
Semiconductor laser device and manufacture thereofInfo
- Publication number
- JPS5518087A JPS5518087A JP9192478A JP9192478A JPS5518087A JP S5518087 A JPS5518087 A JP S5518087A JP 9192478 A JP9192478 A JP 9192478A JP 9192478 A JP9192478 A JP 9192478A JP S5518087 A JPS5518087 A JP S5518087A
- Authority
- JP
- Japan
- Prior art keywords
- projection
- resistance layers
- layer
- sides
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To enclose electrical currents on both the sides of an active region and perform completely-single-spot oscillation, by providing a projection on the surface of a semiconductor substrate, making high-resistance layers on both the sides of the projection, growing layers including the active layer on the entire surface of the projection and the high-resistance layers, making another projection on the uppermost layer and providing other high-resistance layers on both the sides of the latter projection.
CONSTITUTION: A projection is made on the central part of the surface of N-type GaAs substrate 1. High-resistance layers 11 are made from Ga(CH3)3 amd AsH3 by pyrolysis on both the sides of the projection. An N-type Ga0.7Al0.3As layer 2, an N-type GaAs active layer 3, a P-type Ga0.7Al0.3As 4 and a P-type GaAs layer 5 are stratified and epitaxially grown on the entire surface of the projection and the high-resistance layers 11, thereby producing double hetero structures. The part of the layer 5, which is not located just over the projection, is etched off so that the layer 5 is formed to another projection. Other high-resistance layers 11 are provided on both the sides of the projection. A P-side electrode 7 is coated on the flat surface of the latter projection and high-resistance layers. An N-side electrode 8 is coated on the reverse side of the substrate 1.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9192478A JPS5518087A (en) | 1978-07-26 | 1978-07-26 | Semiconductor laser device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9192478A JPS5518087A (en) | 1978-07-26 | 1978-07-26 | Semiconductor laser device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5518087A true JPS5518087A (en) | 1980-02-07 |
Family
ID=14040123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9192478A Pending JPS5518087A (en) | 1978-07-26 | 1978-07-26 | Semiconductor laser device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5518087A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041839A (en) * | 1983-08-17 | 1985-03-05 | Nec Corp | Loop type data transmission system |
| JPS63203898A (en) * | 1987-02-19 | 1988-08-23 | 大福製紙株式会社 | Production of adhesive paper or nonwoven fabric |
| US5804840A (en) * | 1995-06-27 | 1998-09-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device structure including InAlAs or InAlGaAs current blocking layers |
-
1978
- 1978-07-26 JP JP9192478A patent/JPS5518087A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041839A (en) * | 1983-08-17 | 1985-03-05 | Nec Corp | Loop type data transmission system |
| JPH0238029B2 (en) * | 1983-08-17 | 1990-08-28 | Nippon Electric Co | |
| JPS63203898A (en) * | 1987-02-19 | 1988-08-23 | 大福製紙株式会社 | Production of adhesive paper or nonwoven fabric |
| US5804840A (en) * | 1995-06-27 | 1998-09-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device structure including InAlAs or InAlGaAs current blocking layers |
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