JPS5561084A - Semiconductor laser device of striped construction - Google Patents

Semiconductor laser device of striped construction

Info

Publication number
JPS5561084A
JPS5561084A JP13418478A JP13418478A JPS5561084A JP S5561084 A JPS5561084 A JP S5561084A JP 13418478 A JP13418478 A JP 13418478A JP 13418478 A JP13418478 A JP 13418478A JP S5561084 A JPS5561084 A JP S5561084A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor laser
laser device
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13418478A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Morichika Yano
Yukio Kurata
Kaneki Matsui
Akira Komuro
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP13418478A priority Critical patent/JPS5561084A/en
Publication of JPS5561084A publication Critical patent/JPS5561084A/en
Pending legal-status Critical Current

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Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To obtain a laser transmission of single transverse mode over a wide range of electric current, by adopting a specific relationship between the stripe width of striped region constituting a semiconductor laser device and the effective current concentration width on the pn junction surface.
CONSTITUTION: An n-type Ga1-xAlxAs layer 2 (x≃0.3), p-type GaSa layer 3 as an active layer, p-type Ga1-xAlxAs layer 4 (x≃0.3) and a p+-type GaAs layer 5 are laminated and grown on an n-type GaAs substrate 1, to form a double-heterodyne type semiconductor laser device. Stripe portions which constitute the electrodes are exposed on the surface of the layer 5, while remainder portions are covered with an insulating film 6 such as of SiO2. A p-side electrode 7 is laid on the film 6 to make contact with the stripe portions, while n-side electrode 8 is attached to the reverse side of the substrate 1. The stripe width W and the effective current concentration width d of the pn junction are selected to meet the following conditions. D≤8μm, D/3≤W≤D/2.
COPYRIGHT: (C)1980,JPO&Japio
JP13418478A 1978-10-30 1978-10-30 Semiconductor laser device of striped construction Pending JPS5561084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13418478A JPS5561084A (en) 1978-10-30 1978-10-30 Semiconductor laser device of striped construction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13418478A JPS5561084A (en) 1978-10-30 1978-10-30 Semiconductor laser device of striped construction

Publications (1)

Publication Number Publication Date
JPS5561084A true JPS5561084A (en) 1980-05-08

Family

ID=15122394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13418478A Pending JPS5561084A (en) 1978-10-30 1978-10-30 Semiconductor laser device of striped construction

Country Status (1)

Country Link
JP (1) JPS5561084A (en)

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