JPS5518078A - Semiconductor light emission device - Google Patents

Semiconductor light emission device

Info

Publication number
JPS5518078A
JPS5518078A JP9180778A JP9180778A JPS5518078A JP S5518078 A JPS5518078 A JP S5518078A JP 9180778 A JP9180778 A JP 9180778A JP 9180778 A JP9180778 A JP 9180778A JP S5518078 A JPS5518078 A JP S5518078A
Authority
JP
Japan
Prior art keywords
type
protective layers
layer
layers
protons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9180778A
Other languages
Japanese (ja)
Inventor
Hajime Imai
Shinichi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Nippon Telegraph and Telephone Corp filed Critical Fujitsu Ltd
Priority to JP9180778A priority Critical patent/JPS5518078A/en
Publication of JPS5518078A publication Critical patent/JPS5518078A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To prevent the deterioration of a semiconductor laser unit and the leakage of electrical current, by protecting the end faces of active layers for resonator's reflective faces by protective layers, whose resistance is made high by irradiation of protons, and by preventing the contamination of the laser unit during manufacture.
CONSTITUTION: An N-type Ga1-xAlxAs clad layer 2, a P-type Ga1-yAlyAs active layer 3, a P-type Ga1-xAlxAs clad layer 4 and a P-type GaAs electrode contact layer 5 are stratified and grown on an N-type GaAs substrate 1, thereby making double heterojunctions. Both the mirror-faced lateral sides of the stratified assembly are etched to the form of a mesa. The protective layers 10, 11 of dielectric substance are grown on the etched parts and cleft so that mirror faces 10A, 10B are provided. An electrode 6' is coated on the layer 5 off the protective layers 10, 11. Another electrode 7 is coated on the entire reverse side of the substrate 1. The protective layers 10, 11 are irradiated with protons so that the resistance of the layers is made high. Thus, the electric boundary surfaces, which act in practice, are not exposed to the outside. As a result, good oscillation can be effected for a long time.
COPYRIGHT: (C)1980,JPO&Japio
JP9180778A 1978-07-27 1978-07-27 Semiconductor light emission device Pending JPS5518078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9180778A JPS5518078A (en) 1978-07-27 1978-07-27 Semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9180778A JPS5518078A (en) 1978-07-27 1978-07-27 Semiconductor light emission device

Publications (1)

Publication Number Publication Date
JPS5518078A true JPS5518078A (en) 1980-02-07

Family

ID=14036888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9180778A Pending JPS5518078A (en) 1978-07-27 1978-07-27 Semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS5518078A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6062179A (en) * 1983-09-16 1985-04-10 Nec Corp Semiconductor laser
JPS63314875A (en) * 1987-06-18 1988-12-22 Stanley Electric Co Ltd Light emitting diode chip structure
EP3837722A4 (en) * 2018-11-16 2021-10-20 Samsung Electronics Co., Ltd. Light emitting diode, manufacturing method of light emitting diode and display device including light emitting diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6062179A (en) * 1983-09-16 1985-04-10 Nec Corp Semiconductor laser
JPS63314875A (en) * 1987-06-18 1988-12-22 Stanley Electric Co Ltd Light emitting diode chip structure
EP3837722A4 (en) * 2018-11-16 2021-10-20 Samsung Electronics Co., Ltd. Light emitting diode, manufacturing method of light emitting diode and display device including light emitting diode

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