JPS5518078A - Semiconductor light emission device - Google Patents
Semiconductor light emission deviceInfo
- Publication number
- JPS5518078A JPS5518078A JP9180778A JP9180778A JPS5518078A JP S5518078 A JPS5518078 A JP S5518078A JP 9180778 A JP9180778 A JP 9180778A JP 9180778 A JP9180778 A JP 9180778A JP S5518078 A JPS5518078 A JP S5518078A
- Authority
- JP
- Japan
- Prior art keywords
- type
- protective layers
- layer
- layers
- protons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To prevent the deterioration of a semiconductor laser unit and the leakage of electrical current, by protecting the end faces of active layers for resonator's reflective faces by protective layers, whose resistance is made high by irradiation of protons, and by preventing the contamination of the laser unit during manufacture.
CONSTITUTION: An N-type Ga1-xAlxAs clad layer 2, a P-type Ga1-yAlyAs active layer 3, a P-type Ga1-xAlxAs clad layer 4 and a P-type GaAs electrode contact layer 5 are stratified and grown on an N-type GaAs substrate 1, thereby making double heterojunctions. Both the mirror-faced lateral sides of the stratified assembly are etched to the form of a mesa. The protective layers 10, 11 of dielectric substance are grown on the etched parts and cleft so that mirror faces 10A, 10B are provided. An electrode 6' is coated on the layer 5 off the protective layers 10, 11. Another electrode 7 is coated on the entire reverse side of the substrate 1. The protective layers 10, 11 are irradiated with protons so that the resistance of the layers is made high. Thus, the electric boundary surfaces, which act in practice, are not exposed to the outside. As a result, good oscillation can be effected for a long time.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9180778A JPS5518078A (en) | 1978-07-27 | 1978-07-27 | Semiconductor light emission device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9180778A JPS5518078A (en) | 1978-07-27 | 1978-07-27 | Semiconductor light emission device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5518078A true JPS5518078A (en) | 1980-02-07 |
Family
ID=14036888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9180778A Pending JPS5518078A (en) | 1978-07-27 | 1978-07-27 | Semiconductor light emission device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5518078A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6062179A (en) * | 1983-09-16 | 1985-04-10 | Nec Corp | Semiconductor laser |
JPS63314875A (en) * | 1987-06-18 | 1988-12-22 | Stanley Electric Co Ltd | Light emitting diode chip structure |
EP3837722A4 (en) * | 2018-11-16 | 2021-10-20 | Samsung Electronics Co., Ltd. | Light emitting diode, manufacturing method of light emitting diode and display device including light emitting diode |
-
1978
- 1978-07-27 JP JP9180778A patent/JPS5518078A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6062179A (en) * | 1983-09-16 | 1985-04-10 | Nec Corp | Semiconductor laser |
JPS63314875A (en) * | 1987-06-18 | 1988-12-22 | Stanley Electric Co Ltd | Light emitting diode chip structure |
EP3837722A4 (en) * | 2018-11-16 | 2021-10-20 | Samsung Electronics Co., Ltd. | Light emitting diode, manufacturing method of light emitting diode and display device including light emitting diode |
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