JPS55103784A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS55103784A JPS55103784A JP1098479A JP1098479A JPS55103784A JP S55103784 A JPS55103784 A JP S55103784A JP 1098479 A JP1098479 A JP 1098479A JP 1098479 A JP1098479 A JP 1098479A JP S55103784 A JPS55103784 A JP S55103784A
- Authority
- JP
- Japan
- Prior art keywords
- width
- light
- groove
- relaxation oscillation
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To reduce relaxation oscillation by limiting the width of the horizontal mode electric field to nearly 30% or less of the injection current width by means of a light waveguide path or a high light absorbing layer provided at a part of a semiconductor laser.
CONSTITUTION: By reducing the ratio of spot width ω to stripe width W, ω/W, relaxation oscillation can be greatly reduced without sacrificing oscillation, threshold value, light emitting delay time. Since light absorption in n-GaAs substrate 6 is large compared with n-Al0.3Ga0.7As layer 5, light is absorbed by groove 5A and the neighboring part of substrate 6 and the light mode is confined in groove 5A. As a result, groove 5A forms a light waveguide path in contact with high absorption layer 6, the spot width becomes smaller than the groove width, and the relaxation oscillation is further reduced. Assuming the groove width to be 3μm and Zn diffusion width W to be 10μm, ω/W becomes nearly 0.3 or less and the relaxation oscillation is reduced to a half as compared with the conventional laser.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1098479A JPS55103784A (en) | 1979-02-03 | 1979-02-03 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1098479A JPS55103784A (en) | 1979-02-03 | 1979-02-03 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55103784A true JPS55103784A (en) | 1980-08-08 |
Family
ID=11765406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1098479A Pending JPS55103784A (en) | 1979-02-03 | 1979-02-03 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55103784A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4971884A (en) * | 1972-11-10 | 1974-07-11 | ||
JPS51135483A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS5391682A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Semiconductor laser |
-
1979
- 1979-02-03 JP JP1098479A patent/JPS55103784A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4971884A (en) * | 1972-11-10 | 1974-07-11 | ||
JPS51135483A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS5391682A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Semiconductor laser |
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