JPS55103784A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS55103784A
JPS55103784A JP1098479A JP1098479A JPS55103784A JP S55103784 A JPS55103784 A JP S55103784A JP 1098479 A JP1098479 A JP 1098479A JP 1098479 A JP1098479 A JP 1098479A JP S55103784 A JPS55103784 A JP S55103784A
Authority
JP
Japan
Prior art keywords
width
light
groove
relaxation oscillation
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1098479A
Other languages
Japanese (ja)
Inventor
Minoru Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1098479A priority Critical patent/JPS55103784A/en
Publication of JPS55103784A publication Critical patent/JPS55103784A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To reduce relaxation oscillation by limiting the width of the horizontal mode electric field to nearly 30% or less of the injection current width by means of a light waveguide path or a high light absorbing layer provided at a part of a semiconductor laser.
CONSTITUTION: By reducing the ratio of spot width ω to stripe width W, ω/W, relaxation oscillation can be greatly reduced without sacrificing oscillation, threshold value, light emitting delay time. Since light absorption in n-GaAs substrate 6 is large compared with n-Al0.3Ga0.7As layer 5, light is absorbed by groove 5A and the neighboring part of substrate 6 and the light mode is confined in groove 5A. As a result, groove 5A forms a light waveguide path in contact with high absorption layer 6, the spot width becomes smaller than the groove width, and the relaxation oscillation is further reduced. Assuming the groove width to be 3μm and Zn diffusion width W to be 10μm, ω/W becomes nearly 0.3 or less and the relaxation oscillation is reduced to a half as compared with the conventional laser.
COPYRIGHT: (C)1980,JPO&Japio
JP1098479A 1979-02-03 1979-02-03 Semiconductor laser device Pending JPS55103784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1098479A JPS55103784A (en) 1979-02-03 1979-02-03 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1098479A JPS55103784A (en) 1979-02-03 1979-02-03 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS55103784A true JPS55103784A (en) 1980-08-08

Family

ID=11765406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1098479A Pending JPS55103784A (en) 1979-02-03 1979-02-03 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS55103784A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971884A (en) * 1972-11-10 1974-07-11
JPS51135483A (en) * 1975-05-20 1976-11-24 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5391682A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971884A (en) * 1972-11-10 1974-07-11
JPS51135483A (en) * 1975-05-20 1976-11-24 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5391682A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Semiconductor laser

Similar Documents

Publication Publication Date Title
JPS5752186A (en) Semiconductor laser
JPS52109884A (en) Stripe type hetero junction semoonductor laser
JPS5269285A (en) Semiconductor laser device
JPS55103784A (en) Semiconductor laser device
JPS6482587A (en) Quantum well type semiconductor laser
CA2106596A1 (en) Semiconductor laser device
JPS57159084A (en) Semiconductor laser element
JPS5749269A (en) Bidirectional thyristor
JPS5518078A (en) Semiconductor light emission device
JPS56152289A (en) Stripe type semiconductor laser with gate electrode
JPS56112790A (en) Junction type semiconductor laser
JPS57162382A (en) Semiconductor laser
JPS56110288A (en) Semiconductor laser element
JPS52106283A (en) Semiconductor laser unit
JPS551164A (en) Method of fabricating semiconductor laser device
JPS5591892A (en) Semiconductor laser light emission device
JPS52149485A (en) Injection type semiconductor laser element
JPS5617093A (en) Semiconductor laser
JPS6482594A (en) Semiconductor laser device and manufacture thereof
JPS5591893A (en) Semiconductor laser having a light-guide
JPS54138386A (en) Semiconductor laser device of current narrow type
JPS5522844A (en) Semiconductor laser
JPS6417065A (en) Photosensitive body
JPS5543822A (en) Semiconductor light emission device
JPS5265692A (en) Double hetero junction laser