JPS56112790A - Junction type semiconductor laser - Google Patents

Junction type semiconductor laser

Info

Publication number
JPS56112790A
JPS56112790A JP1624880A JP1624880A JPS56112790A JP S56112790 A JPS56112790 A JP S56112790A JP 1624880 A JP1624880 A JP 1624880A JP 1624880 A JP1624880 A JP 1624880A JP S56112790 A JPS56112790 A JP S56112790A
Authority
JP
Japan
Prior art keywords
layer
high resistance
region
type
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1624880A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Ken Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP1624880A priority Critical patent/JPS56112790A/en
Publication of JPS56112790A publication Critical patent/JPS56112790A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer

Abstract

PURPOSE:To prevent the deterioration or surface breakdown of the end face of the output of the semiconductor laser by forming the output end face for irradiating the light of the laser of high resistance semiconductor layer. CONSTITUTION:The first layer 2 of N type Ga1-xAlxAs, the second layer 3 of N or P type GaAs, the third layer 4 of P type Ga1-xAlxAs, and fourth layer 5 of P<+> type GaAs are sequentially formed on an N type GaAs substrate 1, and striped active region is formed. The striped region is formed, for example, by retaining the striped region, irradiating proton thereto to form a high resistance region, and the output end faces 6, 6' are not only formed in parallel with the stripe but have high resistance layer. In order to form the high resistance layer, there are methods of injecting oxygen or chromium atom by an ion injection in addition to the irradiation of the proton, but according to the above method very shallow high resistance layer can be formed, resulting in low loss.
JP1624880A 1980-02-12 1980-02-12 Junction type semiconductor laser Pending JPS56112790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1624880A JPS56112790A (en) 1980-02-12 1980-02-12 Junction type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1624880A JPS56112790A (en) 1980-02-12 1980-02-12 Junction type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56112790A true JPS56112790A (en) 1981-09-05

Family

ID=11911251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1624880A Pending JPS56112790A (en) 1980-02-12 1980-02-12 Junction type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56112790A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830951A (en) * 1986-09-19 1989-05-16 Basf Aktiengesellschaft Naphtholactamsquaric acid dyes and optical recording materials containing these dyes
EP0589727A2 (en) * 1992-09-25 1994-03-30 The Furukawa Electric Co., Ltd. Semiconductor laser device
JP2022520738A (en) * 2019-01-31 2022-04-01 フェルディナント－ブラウン－インスティツット ゲーゲーエムベーハー， ライプニッツ－インスティツット フュー ヘーヒストフレクエンツテヒニク Laser irradiation generator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4866980A (en) * 1971-12-17 1973-09-13
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4866980A (en) * 1971-12-17 1973-09-13
JPS516491A (en) * 1974-07-04 1976-01-20 Nippon Electric Co Handotaireezano seizohoho

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830951A (en) * 1986-09-19 1989-05-16 Basf Aktiengesellschaft Naphtholactamsquaric acid dyes and optical recording materials containing these dyes
EP0589727A2 (en) * 1992-09-25 1994-03-30 The Furukawa Electric Co., Ltd. Semiconductor laser device
EP0589727A3 (en) * 1992-09-25 1994-08-10 Furukawa Electric Co Ltd Semiconductor laser device
JP2022520738A (en) * 2019-01-31 2022-04-01 フェルディナント－ブラウン－インスティツット ゲーゲーエムベーハー， ライプニッツ－インスティツット フュー ヘーヒストフレクエンツテヒニク Laser irradiation generator

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