JPS55108789A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS55108789A
JPS55108789A JP496179A JP496179A JPS55108789A JP S55108789 A JPS55108789 A JP S55108789A JP 496179 A JP496179 A JP 496179A JP 496179 A JP496179 A JP 496179A JP S55108789 A JPS55108789 A JP S55108789A
Authority
JP
Japan
Prior art keywords
layer
groove
light
region
activated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP496179A
Other languages
Japanese (ja)
Other versions
JPS5710590B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP496179A priority Critical patent/JPS55108789A/en
Priority to GB8001589A priority patent/GB2046983B/en
Priority to DE19803001843 priority patent/DE3001843A1/en
Priority to US06/113,161 priority patent/US4321556A/en
Publication of JPS55108789A publication Critical patent/JPS55108789A/en
Publication of JPS5710590B2 publication Critical patent/JPS5710590B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To improve the light beam symmetry without raising oscillation threshold current value by a method wherein the carrier confinement region and the light confinement region are separated from each other and the light confinement layer is buried in a groove region between two low refractive index crystal layers.
CONSTITUTION: A concave groove 22 is formed on a semiconductor substrate 13, on both sides of said groove the diffusion groove 19 is provided. On said substrate 13, a light confinement layer 14, light guide and carrier confinement layer 15, activated layer 16, light and carrier confinement layer 17 and contact simplifying layer 18 are formed. Thereby the layer 14 and the layer 15 are so shaped as to be along the groove of the substrate 13. Also the layer 15 is to be made of the substance, of which refractive index is smaller than the activated layer 16 and of which forbidden band is broader. Further on the interface of the layers 16 and 15 on the interface of the layers 16 and 17, the rectification junction 23 is formed. In this way, the current to be injected into the activated layer is limited to the activated layer region opposing to the convex part of the layer 15.
COPYRIGHT: (C)1980,JPO&Japio
JP496179A 1979-01-18 1979-01-18 Semiconductor laser Granted JPS55108789A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP496179A JPS55108789A (en) 1979-01-18 1979-01-18 Semiconductor laser
GB8001589A GB2046983B (en) 1979-01-18 1980-01-17 Semiconductor lasers
DE19803001843 DE3001843A1 (en) 1979-01-18 1980-01-18 SEMICONDUCTOR LASER
US06/113,161 US4321556A (en) 1979-01-18 1980-01-18 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP496179A JPS55108789A (en) 1979-01-18 1979-01-18 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS55108789A true JPS55108789A (en) 1980-08-21
JPS5710590B2 JPS5710590B2 (en) 1982-02-26

Family

ID=11598172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP496179A Granted JPS55108789A (en) 1979-01-18 1979-01-18 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS55108789A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857773A (en) * 1981-10-01 1983-04-06 Nec Corp Double hetero junction type semiconductor laser
JPS5885586A (en) * 1981-11-16 1983-05-21 Nec Corp Semiconductor laser
JPS58131787A (en) * 1982-01-29 1983-08-05 Nec Corp Semiconductor laser
US4442310A (en) * 1982-07-15 1984-04-10 Rca Corporation Photodetector having enhanced back reflection
JPS5987888A (en) * 1982-11-10 1984-05-21 Sharp Corp Semiconductor laser element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857773A (en) * 1981-10-01 1983-04-06 Nec Corp Double hetero junction type semiconductor laser
JPS5885586A (en) * 1981-11-16 1983-05-21 Nec Corp Semiconductor laser
JPS58131787A (en) * 1982-01-29 1983-08-05 Nec Corp Semiconductor laser
US4442310A (en) * 1982-07-15 1984-04-10 Rca Corporation Photodetector having enhanced back reflection
JPS5987888A (en) * 1982-11-10 1984-05-21 Sharp Corp Semiconductor laser element
JPH05875B2 (en) * 1982-11-10 1993-01-06 Sharp Kk

Also Published As

Publication number Publication date
JPS5710590B2 (en) 1982-02-26

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