JPS55108789A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS55108789A JPS55108789A JP496179A JP496179A JPS55108789A JP S55108789 A JPS55108789 A JP S55108789A JP 496179 A JP496179 A JP 496179A JP 496179 A JP496179 A JP 496179A JP S55108789 A JPS55108789 A JP S55108789A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- light
- region
- activated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To improve the light beam symmetry without raising oscillation threshold current value by a method wherein the carrier confinement region and the light confinement region are separated from each other and the light confinement layer is buried in a groove region between two low refractive index crystal layers.
CONSTITUTION: A concave groove 22 is formed on a semiconductor substrate 13, on both sides of said groove the diffusion groove 19 is provided. On said substrate 13, a light confinement layer 14, light guide and carrier confinement layer 15, activated layer 16, light and carrier confinement layer 17 and contact simplifying layer 18 are formed. Thereby the layer 14 and the layer 15 are so shaped as to be along the groove of the substrate 13. Also the layer 15 is to be made of the substance, of which refractive index is smaller than the activated layer 16 and of which forbidden band is broader. Further on the interface of the layers 16 and 15 on the interface of the layers 16 and 17, the rectification junction 23 is formed. In this way, the current to be injected into the activated layer is limited to the activated layer region opposing to the convex part of the layer 15.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP496179A JPS55108789A (en) | 1979-01-18 | 1979-01-18 | Semiconductor laser |
GB8001589A GB2046983B (en) | 1979-01-18 | 1980-01-17 | Semiconductor lasers |
DE19803001843 DE3001843A1 (en) | 1979-01-18 | 1980-01-18 | SEMICONDUCTOR LASER |
US06/113,161 US4321556A (en) | 1979-01-18 | 1980-01-18 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP496179A JPS55108789A (en) | 1979-01-18 | 1979-01-18 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55108789A true JPS55108789A (en) | 1980-08-21 |
JPS5710590B2 JPS5710590B2 (en) | 1982-02-26 |
Family
ID=11598172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP496179A Granted JPS55108789A (en) | 1979-01-18 | 1979-01-18 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55108789A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5857773A (en) * | 1981-10-01 | 1983-04-06 | Nec Corp | Double hetero junction type semiconductor laser |
JPS5885586A (en) * | 1981-11-16 | 1983-05-21 | Nec Corp | Semiconductor laser |
JPS58131787A (en) * | 1982-01-29 | 1983-08-05 | Nec Corp | Semiconductor laser |
US4442310A (en) * | 1982-07-15 | 1984-04-10 | Rca Corporation | Photodetector having enhanced back reflection |
JPS5987888A (en) * | 1982-11-10 | 1984-05-21 | Sharp Corp | Semiconductor laser element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
-
1979
- 1979-01-18 JP JP496179A patent/JPS55108789A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5857773A (en) * | 1981-10-01 | 1983-04-06 | Nec Corp | Double hetero junction type semiconductor laser |
JPS5885586A (en) * | 1981-11-16 | 1983-05-21 | Nec Corp | Semiconductor laser |
JPS58131787A (en) * | 1982-01-29 | 1983-08-05 | Nec Corp | Semiconductor laser |
US4442310A (en) * | 1982-07-15 | 1984-04-10 | Rca Corporation | Photodetector having enhanced back reflection |
JPS5987888A (en) * | 1982-11-10 | 1984-05-21 | Sharp Corp | Semiconductor laser element |
JPH05875B2 (en) * | 1982-11-10 | 1993-01-06 | Sharp Kk |
Also Published As
Publication number | Publication date |
---|---|
JPS5710590B2 (en) | 1982-02-26 |
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