JPS6441292A - Semiconductor laser array - Google Patents

Semiconductor laser array

Info

Publication number
JPS6441292A
JPS6441292A JP19765287A JP19765287A JPS6441292A JP S6441292 A JPS6441292 A JP S6441292A JP 19765287 A JP19765287 A JP 19765287A JP 19765287 A JP19765287 A JP 19765287A JP S6441292 A JPS6441292 A JP S6441292A
Authority
JP
Japan
Prior art keywords
regions
high resistance
layer
substrate
resistance regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19765287A
Other languages
Japanese (ja)
Inventor
Iwao Komazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19765287A priority Critical patent/JPS6441292A/en
Publication of JPS6441292A publication Critical patent/JPS6441292A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate isolation between respective devices, by forming high resistance regions between respective laser oscillation devices. CONSTITUTION:Stripe grooves are formed on a GaAs substrate 1, and next a clad layer 2, an optical waveguide layer 3, an active layer 4, an optical reflection layer 5, current block layers 8 and 9 are formed serially on this substrate. In succession, a mask 21 is used to implant Ga ions to reach the substrate 1 and to form high resistance regions 33. Next, another mask is used to open windows in current injection regions, and Zn is made to reach the optical reflection film 5 by thermal diffusion to form low resistance Zn diffusion regions 23. An electrode 11 is formed to be striped, and an insulation film 10 is formed on the surface of the high resistance regions 33. Carriers injected by the electrode 11 separated on such a striped state do not expand transversally but pass through the Zn diffusion regions 23 and flow into the active layer 4, so that a high performance operation controlled on a transverse mode can be obtained. Further the respective devices are separated by not the grooves but the high resistance regions, and so device yield can be improved.
JP19765287A 1987-08-07 1987-08-07 Semiconductor laser array Pending JPS6441292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19765287A JPS6441292A (en) 1987-08-07 1987-08-07 Semiconductor laser array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19765287A JPS6441292A (en) 1987-08-07 1987-08-07 Semiconductor laser array

Publications (1)

Publication Number Publication Date
JPS6441292A true JPS6441292A (en) 1989-02-13

Family

ID=16378061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19765287A Pending JPS6441292A (en) 1987-08-07 1987-08-07 Semiconductor laser array

Country Status (1)

Country Link
JP (1) JPS6441292A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212538A (en) * 2009-06-22 2009-09-17 Sony Corp Semiconductor light emitting device, and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212538A (en) * 2009-06-22 2009-09-17 Sony Corp Semiconductor light emitting device, and manufacturing method thereof

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