JPS57157590A - Manufacture of semiconductor laser device - Google Patents

Abstract

PURPOSE:To effectively prevent the reflection of a laser light except the end face of a resonator in a semiconductor laser device by forming a deep etched groove in a wafer, then etching the top of the groove vertically in shallow, depth, and then isolating it along the groove. CONSTITUTION:Double hetero junctions made of an active layer 22 and clad layers 23, 24 are crystallized on a GaAs substrate 21, and an ohmic contacting crystal layer 25 is grown. Then, prescribed electrodes are formed. Subsequently, a mask 30 for isolating elements is formed on the wafer. With the mask 30, the elements are chemically etched. Thereafter, second etching for forming a crystalline surface becoming the reflecting surface is performed at the wafer. The depth of the etching may be the thickness corresponding to the epitaxial layer. The wafer thus formed is isolated into individual elements along the first etched groove. In the device thus formed, the end faces 31, 32 of the crystal vertically etched to the thickness corresponding to the epitaxial layer become reflecting surface. On the other hand, radiated laser light may not be reflected by the end face 33 of the crystal.