JPS6469086A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS6469086A
JPS6469086A JP22687787A JP22687787A JPS6469086A JP S6469086 A JPS6469086 A JP S6469086A JP 22687787 A JP22687787 A JP 22687787A JP 22687787 A JP22687787 A JP 22687787A JP S6469086 A JPS6469086 A JP S6469086A
Authority
JP
Japan
Prior art keywords
layer
type
type gaas
vicinity
ultraviolet rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22687787A
Other languages
Japanese (ja)
Other versions
JP2679057B2 (en
Inventor
Tatsuya Asaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62226877A priority Critical patent/JP2679057B2/en
Publication of JPS6469086A publication Critical patent/JPS6469086A/en
Application granted granted Critical
Publication of JP2679057B2 publication Critical patent/JP2679057B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to cleave a laser chip, by applying the step- difference of a wafer surface after growth to a mark, and reduce the manufacturing process, by growing a thin film of compound semiconductor on the upper part of a window region, while the film is irradiated with ultraviolet rays, and obtaining a film thickness different from that of the other part of the compound semiconductor. CONSTITUTION:The title device is formed by laminating the following in order on an N-type GaAs substrate 102; an N-type GaAs buffer layer 103, an N-type Al0.4Ga0.6As clad layer 104, an Al0.15Ga0.85As active layer 109, a P-type Al0.4Ga0.6 As clad layer 106, a P-type GaAs cap layer 109, and an N-type GaAs block layer 107. When the active layer is formed, an Al0.2Ga0.8As window region 110 having large Al content is formed only in the vicinity of a cleavage surface, by radiating ultraviolet rays on the vicinity of the cleavage surface. Further, when the P-type clad layer is formed, a thick Al0.6Ga0.4As layer 112 is formed on the upper part of the window region 110, by radiating ultraviolet rays. Then cleaving is performed along the region of thick film in the vicinity of cleavage surface, and a resonator is formed.
JP62226877A 1987-09-10 1987-09-10 Manufacturing method of semiconductor laser Expired - Lifetime JP2679057B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62226877A JP2679057B2 (en) 1987-09-10 1987-09-10 Manufacturing method of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62226877A JP2679057B2 (en) 1987-09-10 1987-09-10 Manufacturing method of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6469086A true JPS6469086A (en) 1989-03-15
JP2679057B2 JP2679057B2 (en) 1997-11-19

Family

ID=16851975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62226877A Expired - Lifetime JP2679057B2 (en) 1987-09-10 1987-09-10 Manufacturing method of semiconductor laser

Country Status (1)

Country Link
JP (1) JP2679057B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2649548A1 (en) * 1989-07-06 1991-01-11 Thomson Csf SOLID LASER WITH WAVELENGTH OF EMISSION 0,5-0,65 MICROMETERS
JP2010021418A (en) * 2008-07-11 2010-01-28 Ricoh Co Ltd Method for manufacturing surface-emitting laser, surface-emitting laser and surface-emitting laser array, and optical scanning device and image forming apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220394A (en) * 1985-03-26 1986-09-30 Mitsubishi Electric Corp Laser diode and manufacture thereof
JPS63227090A (en) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220394A (en) * 1985-03-26 1986-09-30 Mitsubishi Electric Corp Laser diode and manufacture thereof
JPS63227090A (en) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2649548A1 (en) * 1989-07-06 1991-01-11 Thomson Csf SOLID LASER WITH WAVELENGTH OF EMISSION 0,5-0,65 MICROMETERS
US5173910A (en) * 1989-07-06 1992-12-22 Thomson-Csf Solid laser with an emission wavelength of 0.5-0.65 micrometers
JP2010021418A (en) * 2008-07-11 2010-01-28 Ricoh Co Ltd Method for manufacturing surface-emitting laser, surface-emitting laser and surface-emitting laser array, and optical scanning device and image forming apparatus

Also Published As

Publication number Publication date
JP2679057B2 (en) 1997-11-19

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