JPS6469086A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS6469086A JPS6469086A JP22687787A JP22687787A JPS6469086A JP S6469086 A JPS6469086 A JP S6469086A JP 22687787 A JP22687787 A JP 22687787A JP 22687787 A JP22687787 A JP 22687787A JP S6469086 A JPS6469086 A JP S6469086A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- type gaas
- vicinity
- ultraviolet rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To make it possible to cleave a laser chip, by applying the step- difference of a wafer surface after growth to a mark, and reduce the manufacturing process, by growing a thin film of compound semiconductor on the upper part of a window region, while the film is irradiated with ultraviolet rays, and obtaining a film thickness different from that of the other part of the compound semiconductor. CONSTITUTION:The title device is formed by laminating the following in order on an N-type GaAs substrate 102; an N-type GaAs buffer layer 103, an N-type Al0.4Ga0.6As clad layer 104, an Al0.15Ga0.85As active layer 109, a P-type Al0.4Ga0.6 As clad layer 106, a P-type GaAs cap layer 109, and an N-type GaAs block layer 107. When the active layer is formed, an Al0.2Ga0.8As window region 110 having large Al content is formed only in the vicinity of a cleavage surface, by radiating ultraviolet rays on the vicinity of the cleavage surface. Further, when the P-type clad layer is formed, a thick Al0.6Ga0.4As layer 112 is formed on the upper part of the window region 110, by radiating ultraviolet rays. Then cleaving is performed along the region of thick film in the vicinity of cleavage surface, and a resonator is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62226877A JP2679057B2 (en) | 1987-09-10 | 1987-09-10 | Manufacturing method of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62226877A JP2679057B2 (en) | 1987-09-10 | 1987-09-10 | Manufacturing method of semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6469086A true JPS6469086A (en) | 1989-03-15 |
JP2679057B2 JP2679057B2 (en) | 1997-11-19 |
Family
ID=16851975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62226877A Expired - Lifetime JP2679057B2 (en) | 1987-09-10 | 1987-09-10 | Manufacturing method of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2679057B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2649548A1 (en) * | 1989-07-06 | 1991-01-11 | Thomson Csf | SOLID LASER WITH WAVELENGTH OF EMISSION 0,5-0,65 MICROMETERS |
JP2010021418A (en) * | 2008-07-11 | 2010-01-28 | Ricoh Co Ltd | Method for manufacturing surface-emitting laser, surface-emitting laser and surface-emitting laser array, and optical scanning device and image forming apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61220394A (en) * | 1985-03-26 | 1986-09-30 | Mitsubishi Electric Corp | Laser diode and manufacture thereof |
JPS63227090A (en) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacture thereof |
-
1987
- 1987-09-10 JP JP62226877A patent/JP2679057B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61220394A (en) * | 1985-03-26 | 1986-09-30 | Mitsubishi Electric Corp | Laser diode and manufacture thereof |
JPS63227090A (en) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacture thereof |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2649548A1 (en) * | 1989-07-06 | 1991-01-11 | Thomson Csf | SOLID LASER WITH WAVELENGTH OF EMISSION 0,5-0,65 MICROMETERS |
US5173910A (en) * | 1989-07-06 | 1992-12-22 | Thomson-Csf | Solid laser with an emission wavelength of 0.5-0.65 micrometers |
JP2010021418A (en) * | 2008-07-11 | 2010-01-28 | Ricoh Co Ltd | Method for manufacturing surface-emitting laser, surface-emitting laser and surface-emitting laser array, and optical scanning device and image forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2679057B2 (en) | 1997-11-19 |
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Legal Events
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