JPS6457779A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS6457779A JPS6457779A JP21446387A JP21446387A JPS6457779A JP S6457779 A JPS6457779 A JP S6457779A JP 21446387 A JP21446387 A JP 21446387A JP 21446387 A JP21446387 A JP 21446387A JP S6457779 A JPS6457779 A JP S6457779A
- Authority
- JP
- Japan
- Prior art keywords
- clad layer
- damage
- layer
- compound semiconductor
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To cleave a laser chip at a damage as a mark and to largely shorten manufacturing steps by growing a window region, then increasing the intensity of an ultraviolet light to be irradiated to damage the surface of a thin compound semiconductor film above a window region. CONSTITUTION:A first clad layer having the same conductivity type as that of a single crystalline compound semiconductor substrate, an active layer having a gap smaller than the band gap of the clad layer, and a second clad layer having a band gap larger than that of the active layer and different conductivity type from that of the first clad layer are formed on the substrate. When an N-type blocking layer 107 is formed, a light intensity is raised to irradiate an ultraviolet light to damage the surface near a cleaved face, thereby forming a surface damaged region 112. Then it is cleaved along the surface damaged region to form a resonator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62214463A JP2629194B2 (en) | 1987-08-28 | 1987-08-28 | Manufacturing method of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62214463A JP2629194B2 (en) | 1987-08-28 | 1987-08-28 | Manufacturing method of semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6457779A true JPS6457779A (en) | 1989-03-06 |
JP2629194B2 JP2629194B2 (en) | 1997-07-09 |
Family
ID=16656148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62214463A Expired - Lifetime JP2629194B2 (en) | 1987-08-28 | 1987-08-28 | Manufacturing method of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2629194B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5239347A (en) * | 1990-10-11 | 1993-08-24 | Canon Kabushiki Kaisha | Image forming apparatus having recording material carrying member and movable assisting member |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60163491A (en) * | 1984-02-03 | 1985-08-26 | Omron Tateisi Electronics Co | Cleavage method for semiconductor laser wafer |
JPS61220394A (en) * | 1985-03-26 | 1986-09-30 | Mitsubishi Electric Corp | Laser diode and manufacture thereof |
-
1987
- 1987-08-28 JP JP62214463A patent/JP2629194B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60163491A (en) * | 1984-02-03 | 1985-08-26 | Omron Tateisi Electronics Co | Cleavage method for semiconductor laser wafer |
JPS61220394A (en) * | 1985-03-26 | 1986-09-30 | Mitsubishi Electric Corp | Laser diode and manufacture thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5239347A (en) * | 1990-10-11 | 1993-08-24 | Canon Kabushiki Kaisha | Image forming apparatus having recording material carrying member and movable assisting member |
Also Published As
Publication number | Publication date |
---|---|
JP2629194B2 (en) | 1997-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56104488A (en) | Semiconductor laser element | |
DE3751782T2 (en) | Semiconductor structures and their manufacturing processes | |
GB1530085A (en) | Semiconductor device manufacture | |
JPS6457779A (en) | Manufacture of semiconductor laser | |
KR970024330A (en) | METHOD FOR THE MANUFACTURE OF A LIGHT EMITTING DIODE | |
EP0984535A3 (en) | Semiconductor laser with grating structure | |
SE7908485L (en) | SETTING CLIFT SEMICONDUCTOR DIASON LASER PLATOR | |
JPS5635434A (en) | Manufacturing of semiconductor device | |
JPS57187936A (en) | Manufacture of 3-5 family compound semiconductor element | |
SE9804422D0 (en) | Method for wavelength compensation in semi-conductor manufacturing | |
JPS57183091A (en) | Manufacture of optical integrated circuit | |
JPS6425494A (en) | Semiconductor laser device and manufacture thereof | |
JPS6469086A (en) | Manufacture of semiconductor laser | |
JPS6441293A (en) | Manufacture of substrate for optoelectronic integrated circuit | |
JPS5735392A (en) | Semiconductor light source with photodetector to monitor | |
JPS57199288A (en) | Laser diode | |
JPS6461016A (en) | Manufacture of semiconductor device | |
JPS57157590A (en) | Manufacture of semiconductor laser device | |
JPS5654086A (en) | Manufacture of semiconductor laser apparatus | |
KR960009302B1 (en) | Manufacturing method of semiconductor laser diode with multi lasing area | |
JPS5478683A (en) | Manufacture of semiconductor laser | |
JPS6450591A (en) | Semiconductor device and manufacture thereof | |
JPS5748286A (en) | Manufacture of buried hetero structured semiconductor laser | |
JPS5478682A (en) | Manufactre of semiconductor laser | |
JPS55125692A (en) | Semiconductor laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080418 Year of fee payment: 11 |