JPS6457779A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS6457779A
JPS6457779A JP21446387A JP21446387A JPS6457779A JP S6457779 A JPS6457779 A JP S6457779A JP 21446387 A JP21446387 A JP 21446387A JP 21446387 A JP21446387 A JP 21446387A JP S6457779 A JPS6457779 A JP S6457779A
Authority
JP
Japan
Prior art keywords
clad layer
damage
layer
compound semiconductor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21446387A
Other languages
Japanese (ja)
Other versions
JP2629194B2 (en
Inventor
Tatsuya Asaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62214463A priority Critical patent/JP2629194B2/en
Publication of JPS6457779A publication Critical patent/JPS6457779A/en
Application granted granted Critical
Publication of JP2629194B2 publication Critical patent/JP2629194B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To cleave a laser chip at a damage as a mark and to largely shorten manufacturing steps by growing a window region, then increasing the intensity of an ultraviolet light to be irradiated to damage the surface of a thin compound semiconductor film above a window region. CONSTITUTION:A first clad layer having the same conductivity type as that of a single crystalline compound semiconductor substrate, an active layer having a gap smaller than the band gap of the clad layer, and a second clad layer having a band gap larger than that of the active layer and different conductivity type from that of the first clad layer are formed on the substrate. When an N-type blocking layer 107 is formed, a light intensity is raised to irradiate an ultraviolet light to damage the surface near a cleaved face, thereby forming a surface damaged region 112. Then it is cleaved along the surface damaged region to form a resonator.
JP62214463A 1987-08-28 1987-08-28 Manufacturing method of semiconductor laser Expired - Lifetime JP2629194B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62214463A JP2629194B2 (en) 1987-08-28 1987-08-28 Manufacturing method of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62214463A JP2629194B2 (en) 1987-08-28 1987-08-28 Manufacturing method of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6457779A true JPS6457779A (en) 1989-03-06
JP2629194B2 JP2629194B2 (en) 1997-07-09

Family

ID=16656148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62214463A Expired - Lifetime JP2629194B2 (en) 1987-08-28 1987-08-28 Manufacturing method of semiconductor laser

Country Status (1)

Country Link
JP (1) JP2629194B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239347A (en) * 1990-10-11 1993-08-24 Canon Kabushiki Kaisha Image forming apparatus having recording material carrying member and movable assisting member

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163491A (en) * 1984-02-03 1985-08-26 Omron Tateisi Electronics Co Cleavage method for semiconductor laser wafer
JPS61220394A (en) * 1985-03-26 1986-09-30 Mitsubishi Electric Corp Laser diode and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163491A (en) * 1984-02-03 1985-08-26 Omron Tateisi Electronics Co Cleavage method for semiconductor laser wafer
JPS61220394A (en) * 1985-03-26 1986-09-30 Mitsubishi Electric Corp Laser diode and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239347A (en) * 1990-10-11 1993-08-24 Canon Kabushiki Kaisha Image forming apparatus having recording material carrying member and movable assisting member

Also Published As

Publication number Publication date
JP2629194B2 (en) 1997-07-09

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