JPS6441293A - Manufacture of substrate for optoelectronic integrated circuit - Google Patents

Manufacture of substrate for optoelectronic integrated circuit

Info

Publication number
JPS6441293A
JPS6441293A JP19765787A JP19765787A JPS6441293A JP S6441293 A JPS6441293 A JP S6441293A JP 19765787 A JP19765787 A JP 19765787A JP 19765787 A JP19765787 A JP 19765787A JP S6441293 A JPS6441293 A JP S6441293A
Authority
JP
Japan
Prior art keywords
substrate
wiring
stepped part
smooth
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19765787A
Other languages
Japanese (ja)
Inventor
Yasumasa Imoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19765787A priority Critical patent/JPS6441293A/en
Publication of JPS6441293A publication Critical patent/JPS6441293A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To prevent wiring disconnection from occurring upon the forming of a wiring pattern so as to improve yield, by forming a slant face to be smooth in an optoelectronic integrated circuit with wiring structure on its slant face part. CONSTITUTION:After a first mask 17 is used to form a stepped part 18 on a substrate 2, the first mask is removed. An etching solution of bromine- contained methylalcohol is used to etch the substrate 2, and then a slant plane at a stepped part 18 is formed into a smooth slant plane stepped part 1 of 20 deg. or smaller. Subsequently, an active layer 7, a gate layer 8, a contact layer 3, an etching stop layer 4, and a burial type layer structure 5 are formed on the substrate 2. Next the same process as conventional one is used to form a semiconductor laser part 6 and a field-effect transistor 9 respectively on right and left sides of the smooth slant face stepped part 1. Since the stepped part of the substrate is thus formed into the smooth slant face, wiring disconnection can be prevented from occurring due to defect in a wiring pattern upon the forming of the wiring 15.
JP19765787A 1987-08-07 1987-08-07 Manufacture of substrate for optoelectronic integrated circuit Pending JPS6441293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19765787A JPS6441293A (en) 1987-08-07 1987-08-07 Manufacture of substrate for optoelectronic integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19765787A JPS6441293A (en) 1987-08-07 1987-08-07 Manufacture of substrate for optoelectronic integrated circuit

Publications (1)

Publication Number Publication Date
JPS6441293A true JPS6441293A (en) 1989-02-13

Family

ID=16378146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19765787A Pending JPS6441293A (en) 1987-08-07 1987-08-07 Manufacture of substrate for optoelectronic integrated circuit

Country Status (1)

Country Link
JP (1) JPS6441293A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477982A (en) * 1987-09-18 1989-03-23 Sanyo Electric Co Machining method of substrate
JP2001244572A (en) * 2000-03-02 2001-09-07 Sony Corp Method of manufacturing semiconductor laser light emitting device
WO2008099779A1 (en) * 2007-02-13 2008-08-21 Olympus Corporation Variable spectroscopic element, spectroscopic device, and endoscope system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477982A (en) * 1987-09-18 1989-03-23 Sanyo Electric Co Machining method of substrate
JP2001244572A (en) * 2000-03-02 2001-09-07 Sony Corp Method of manufacturing semiconductor laser light emitting device
WO2008099779A1 (en) * 2007-02-13 2008-08-21 Olympus Corporation Variable spectroscopic element, spectroscopic device, and endoscope system
JP2008197361A (en) * 2007-02-13 2008-08-28 Olympus Corp Variable spectroscopic element, spectroscopic device, and endoscope system
US8134713B2 (en) 2007-02-13 2012-03-13 Olympus Corporation Variable spectroscopy element, spectroscopy apparatus, and endoscope system

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