JPS6424465A - Manufacture of mesfet - Google Patents
Manufacture of mesfetInfo
- Publication number
- JPS6424465A JPS6424465A JP18049787A JP18049787A JPS6424465A JP S6424465 A JPS6424465 A JP S6424465A JP 18049787 A JP18049787 A JP 18049787A JP 18049787 A JP18049787 A JP 18049787A JP S6424465 A JPS6424465 A JP S6424465A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- layer
- gate
- exposed
- insulating films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain easily the fine pattern of a gate electrode by a method wherein an inverted trapezoid-shaped first groove is formed partially in a high- resistance layer on a semiconductor substrate and its aperture width is made small by insulating films annexed on the groove walls of the first groove to form a gate in a second groove, whereon an operating layer just under this first groove is exposed. CONSTITUTION:A high-resistance layer 6 is etched until the surface of a contact layer 5 is exposed to form a first groove 11. This is formed into the form of an inverted trapezoid. An etching is performed selectively on the high- resistance layer until a contact layer 4 reaches to an operating layer 3 to form a second groove 12 and insulating films 14a and 14b consisting of SiO2 are formed on sidewalls 11a and 11b of the groove 11. As a result, the interval between the insulating films can be made smaller than a dimension B. A gate 16 having a gate length of a length to correspond to the interval between the films 14a and 14b is formed in the groove 12. A photo resist 17 is buried in the groove 11 and SjD2 film 7 and the layer 6 are etched using this resist 17 as a mask until the layer 4 is exposed and are removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18049787A JPS6424465A (en) | 1987-07-20 | 1987-07-20 | Manufacture of mesfet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18049787A JPS6424465A (en) | 1987-07-20 | 1987-07-20 | Manufacture of mesfet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6424465A true JPS6424465A (en) | 1989-01-26 |
Family
ID=16084278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18049787A Pending JPS6424465A (en) | 1987-07-20 | 1987-07-20 | Manufacture of mesfet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6424465A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0445546A (en) * | 1990-06-13 | 1992-02-14 | Nec Corp | Field-effect transistor |
| US5139968A (en) * | 1989-03-03 | 1992-08-18 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a t-shaped gate electrode |
| US5338703A (en) * | 1992-10-26 | 1994-08-16 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a recessed gate field effect transistor |
| US5358885A (en) * | 1992-08-19 | 1994-10-25 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitance |
| US5516710A (en) * | 1994-11-10 | 1996-05-14 | Northern Telecom Limited | Method of forming a transistor |
-
1987
- 1987-07-20 JP JP18049787A patent/JPS6424465A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139968A (en) * | 1989-03-03 | 1992-08-18 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a t-shaped gate electrode |
| JPH0445546A (en) * | 1990-06-13 | 1992-02-14 | Nec Corp | Field-effect transistor |
| US5358885A (en) * | 1992-08-19 | 1994-10-25 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitance |
| US5338703A (en) * | 1992-10-26 | 1994-08-16 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a recessed gate field effect transistor |
| US5516710A (en) * | 1994-11-10 | 1996-05-14 | Northern Telecom Limited | Method of forming a transistor |
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