JPS5676569A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5676569A
JPS5676569A JP15339579A JP15339579A JPS5676569A JP S5676569 A JPS5676569 A JP S5676569A JP 15339579 A JP15339579 A JP 15339579A JP 15339579 A JP15339579 A JP 15339579A JP S5676569 A JPS5676569 A JP S5676569A
Authority
JP
Japan
Prior art keywords
forming
layer
conductivity type
shaped groove
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15339579A
Other languages
Japanese (ja)
Inventor
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15339579A priority Critical patent/JPS5676569A/en
Publication of JPS5676569A publication Critical patent/JPS5676569A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance formation of extremely short gate region in a semiconductor device by forming a V-shaped groove in a semiconductor layer becoming an operating layer of bulk conductivity type MOSFET and forming the region interposed between the projected end of the groove and the semi-insulating substrate as effective gate region. CONSTITUTION:A one-conductivity type layer 16 is formed on a semi-insulating substrate 15, a pattern for forming a V-shaped groove is formed in a resist 22 coated thereon, with the pattern as a mask the layer 16 is anisotropically etched with anisotropic etchant, thereby forming a V-shaped groove 17. An insulating film 18 is formed on the surface of the groove 17, a gate electrode 19 is coated thereon, and a source electrode 20 and drain electrode 21 are formed on the semiconductor layer 16, and there can be obtained a bulk conductivity type MOSFET.
JP15339579A 1979-11-27 1979-11-27 Semiconductor device and manufacture thereof Pending JPS5676569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15339579A JPS5676569A (en) 1979-11-27 1979-11-27 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15339579A JPS5676569A (en) 1979-11-27 1979-11-27 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5676569A true JPS5676569A (en) 1981-06-24

Family

ID=15561548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15339579A Pending JPS5676569A (en) 1979-11-27 1979-11-27 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5676569A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202782A (en) * 1981-05-13 1982-12-11 Nec Corp Formation of gate electrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376771A (en) * 1976-12-20 1978-07-07 Toshiaki Ikoma Insulated gate type field effect transistor
JPS53111283A (en) * 1977-03-09 1978-09-28 Matsushita Electric Ind Co Ltd Compound semiconductor device and production of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376771A (en) * 1976-12-20 1978-07-07 Toshiaki Ikoma Insulated gate type field effect transistor
JPS53111283A (en) * 1977-03-09 1978-09-28 Matsushita Electric Ind Co Ltd Compound semiconductor device and production of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202782A (en) * 1981-05-13 1982-12-11 Nec Corp Formation of gate electrode

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