JPS53135582A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS53135582A JPS53135582A JP5051977A JP5051977A JPS53135582A JP S53135582 A JPS53135582 A JP S53135582A JP 5051977 A JP5051977 A JP 5051977A JP 5051977 A JP5051977 A JP 5051977A JP S53135582 A JPS53135582 A JP S53135582A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- gate electrode
- alignment
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To establish fine pattern with excellent accuracy and to increase the high frequency performance, by applying side etching for the formation of a gate electrode and forming the source and drain electrodes with self-alignment with the gate electrode.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5051977A JPS53135582A (en) | 1977-04-30 | 1977-04-30 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5051977A JPS53135582A (en) | 1977-04-30 | 1977-04-30 | Semiconductor device and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53135582A true JPS53135582A (en) | 1978-11-27 |
JPS5757872B2 JPS5757872B2 (en) | 1982-12-07 |
Family
ID=12861213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5051977A Granted JPS53135582A (en) | 1977-04-30 | 1977-04-30 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53135582A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55110047A (en) * | 1979-02-19 | 1980-08-25 | Matsushita Electric Ind Co Ltd | Manufacture of gallium arsenide semiconductor device |
JPS59126676A (en) * | 1983-01-07 | 1984-07-21 | Nec Corp | Field effect type transistor |
JPH02126628A (en) * | 1988-11-07 | 1990-05-15 | Canon Inc | Alignment device and its alignment method |
-
1977
- 1977-04-30 JP JP5051977A patent/JPS53135582A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55110047A (en) * | 1979-02-19 | 1980-08-25 | Matsushita Electric Ind Co Ltd | Manufacture of gallium arsenide semiconductor device |
JPS59126676A (en) * | 1983-01-07 | 1984-07-21 | Nec Corp | Field effect type transistor |
JPS6323665B2 (en) * | 1983-01-07 | 1988-05-17 | Nippon Electric Co | |
JPH02126628A (en) * | 1988-11-07 | 1990-05-15 | Canon Inc | Alignment device and its alignment method |
Also Published As
Publication number | Publication date |
---|---|
JPS5757872B2 (en) | 1982-12-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54881A (en) | Semiconductor device | |
JPS53135582A (en) | Semiconductor device and its manufacture | |
JPS5412573A (en) | Junction type field effect transistor and production of the same | |
JPS538076A (en) | Production of mis semiconductor device | |
JPS54880A (en) | Manufacture of semiconductor device | |
JPS54884A (en) | Manufacture of field effect transistor | |
JPS53145485A (en) | Production of semiconductor device having serrations on semiconductor surface | |
JPS5370769A (en) | Production of semiconductor device | |
JPS52130567A (en) | Preparation of semiconductor device | |
JPS52153383A (en) | Preparation of semiconductor device | |
JPS52100877A (en) | Field effect transistor of junction type | |
JPS5394775A (en) | Manufacture of semiconductor device | |
JPS5381085A (en) | Production of semiconductor device | |
JPS5369587A (en) | Manufacture for semiconductor device | |
JPS5419367A (en) | Production of semiconductor device | |
JPS5423478A (en) | Semiconductor device of field effect type | |
JPS53120376A (en) | Production of semiconductor device | |
JPS5367381A (en) | Semiconductor device | |
JPS539488A (en) | Production of semiconductor device | |
JPS53100779A (en) | Production of insulated gate type semiconductor device | |
JPS5530873A (en) | High withstand field-effect transistor of mis type | |
JPS5376770A (en) | Production of insulated gate field effect transistor | |
JPS5265682A (en) | Semiconductor device | |
JPS548971A (en) | Manufacture of semiconductor device | |
JPS544579A (en) | Production of mos type semiconductor devices |