JPS53111283A - Compound semiconductor device and production of the same - Google Patents
Compound semiconductor device and production of the sameInfo
- Publication number
- JPS53111283A JPS53111283A JP2653177A JP2653177A JPS53111283A JP S53111283 A JPS53111283 A JP S53111283A JP 2653177 A JP2653177 A JP 2653177A JP 2653177 A JP2653177 A JP 2653177A JP S53111283 A JPS53111283 A JP S53111283A
- Authority
- JP
- Japan
- Prior art keywords
- production
- same
- semiconductor device
- compound semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To produce an insulated gate FET (MOST) of a short gate length suitable for high frequency responding by using a group III-V semiconductor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2653177A JPS6040716B2 (en) | 1977-03-09 | 1977-03-09 | Compound semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2653177A JPS6040716B2 (en) | 1977-03-09 | 1977-03-09 | Compound semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53111283A true JPS53111283A (en) | 1978-09-28 |
JPS6040716B2 JPS6040716B2 (en) | 1985-09-12 |
Family
ID=12196057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2653177A Expired JPS6040716B2 (en) | 1977-03-09 | 1977-03-09 | Compound semiconductor device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6040716B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586167A (en) * | 1978-12-23 | 1980-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Mos diode |
JPS5676569A (en) * | 1979-11-27 | 1981-06-24 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
JPS5676571A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Mos field effect transistor and manufacture thereof |
JPS5768073A (en) * | 1980-10-14 | 1982-04-26 | Nec Corp | Field effect transistor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0632558U (en) * | 1992-04-03 | 1994-04-28 | 株式会社小向建装 | Bonding structure of plates |
-
1977
- 1977-03-09 JP JP2653177A patent/JPS6040716B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586167A (en) * | 1978-12-23 | 1980-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Mos diode |
JPS5676569A (en) * | 1979-11-27 | 1981-06-24 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
JPS5676571A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Mos field effect transistor and manufacture thereof |
JPS5768073A (en) * | 1980-10-14 | 1982-04-26 | Nec Corp | Field effect transistor |
JPH023540B2 (en) * | 1980-10-14 | 1990-01-24 | Nippon Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS6040716B2 (en) | 1985-09-12 |
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