JPS5534447A - Preparation of semicinductor device - Google Patents

Preparation of semicinductor device

Info

Publication number
JPS5534447A
JPS5534447A JP10676678A JP10676678A JPS5534447A JP S5534447 A JPS5534447 A JP S5534447A JP 10676678 A JP10676678 A JP 10676678A JP 10676678 A JP10676678 A JP 10676678A JP S5534447 A JPS5534447 A JP S5534447A
Authority
JP
Japan
Prior art keywords
film
silicon film
etching
rate
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10676678A
Other languages
Japanese (ja)
Inventor
Toshihiko Ono
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10676678A priority Critical patent/JPS5534447A/en
Publication of JPS5534447A publication Critical patent/JPS5534447A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To simply prepare an element with excellent characteristics, by changing the etching-rate of a silicon film covering a region that a Schottky-barrier-diode must be formed, and by removing the silicon film without damaging a surface of a substrate.
CONSTITUTION: A base region 12 is made up, and a SiO2 mask 13 and a silicon film 14 are built up. An emitter region 16 is diffused, a photoresist film 17 is formed and a window 13S for making up a Schottky-barrier-diode (SBD) is exposed by patterning the film 17. Argon ions, etc. are injected, the etching-rate of the silicon film 14 is increased, the film 14 is patterned, and the resist film is removed, thus building up an electrode. Consequently, a surface of a semiconductor layer 11 is not damaged because the etching-rate of the silicon film 14 is large, and etching in the lateral direction is not also produced, thus obtaining an element with high reliability.
COPYRIGHT: (C)1980,JPO&Japio
JP10676678A 1978-08-31 1978-08-31 Preparation of semicinductor device Pending JPS5534447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10676678A JPS5534447A (en) 1978-08-31 1978-08-31 Preparation of semicinductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10676678A JPS5534447A (en) 1978-08-31 1978-08-31 Preparation of semicinductor device

Publications (1)

Publication Number Publication Date
JPS5534447A true JPS5534447A (en) 1980-03-11

Family

ID=14442018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10676678A Pending JPS5534447A (en) 1978-08-31 1978-08-31 Preparation of semicinductor device

Country Status (1)

Country Link
JP (1) JPS5534447A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414967A (en) * 1987-07-08 1989-01-19 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414967A (en) * 1987-07-08 1989-01-19 Nec Corp Manufacture of semiconductor device

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