JPS5534447A - Preparation of semicinductor device - Google Patents
Preparation of semicinductor deviceInfo
- Publication number
- JPS5534447A JPS5534447A JP10676678A JP10676678A JPS5534447A JP S5534447 A JPS5534447 A JP S5534447A JP 10676678 A JP10676678 A JP 10676678A JP 10676678 A JP10676678 A JP 10676678A JP S5534447 A JPS5534447 A JP S5534447A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon film
- etching
- rate
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To simply prepare an element with excellent characteristics, by changing the etching-rate of a silicon film covering a region that a Schottky-barrier-diode must be formed, and by removing the silicon film without damaging a surface of a substrate.
CONSTITUTION: A base region 12 is made up, and a SiO2 mask 13 and a silicon film 14 are built up. An emitter region 16 is diffused, a photoresist film 17 is formed and a window 13S for making up a Schottky-barrier-diode (SBD) is exposed by patterning the film 17. Argon ions, etc. are injected, the etching-rate of the silicon film 14 is increased, the film 14 is patterned, and the resist film is removed, thus building up an electrode. Consequently, a surface of a semiconductor layer 11 is not damaged because the etching-rate of the silicon film 14 is large, and etching in the lateral direction is not also produced, thus obtaining an element with high reliability.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10676678A JPS5534447A (en) | 1978-08-31 | 1978-08-31 | Preparation of semicinductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10676678A JPS5534447A (en) | 1978-08-31 | 1978-08-31 | Preparation of semicinductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5534447A true JPS5534447A (en) | 1980-03-11 |
Family
ID=14442018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10676678A Pending JPS5534447A (en) | 1978-08-31 | 1978-08-31 | Preparation of semicinductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5534447A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6414967A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Manufacture of semiconductor device |
-
1978
- 1978-08-31 JP JP10676678A patent/JPS5534447A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6414967A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Manufacture of semiconductor device |
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