JPS5544718A - Manufacturing semiconductor device - Google Patents

Manufacturing semiconductor device

Info

Publication number
JPS5544718A
JPS5544718A JP11768378A JP11768378A JPS5544718A JP S5544718 A JPS5544718 A JP S5544718A JP 11768378 A JP11768378 A JP 11768378A JP 11768378 A JP11768378 A JP 11768378A JP S5544718 A JPS5544718 A JP S5544718A
Authority
JP
Japan
Prior art keywords
region
film
glass powder
glass
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11768378A
Other languages
Japanese (ja)
Inventor
Kenichi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11768378A priority Critical patent/JPS5544718A/en
Publication of JPS5544718A publication Critical patent/JPS5544718A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To manufacture a high-reliability device by forming a region on one side of a semiconductor substrate in a mesa shape so that the depth of the region reaches the region on the other side, depositing glass powder on the exposed surface, removing a film by plasma etching, and sintering the glass.
CONSTITUTION: A P+ region 11, an N-type region 12, and an N+ region 13 are formed in a semiconductor substrate 14, constituting a 3-layer structure. A photoresist film 15 is formed by applying organic photoresist liquid on all over the surface of the region 11 of the substate 14 and exposing it. Then a mesa shape is formed by etching until the depth reaches the region 12, with the film 15 as a mask. Then, glass powder 16 is uniformly deposited on all the exposed surface. Thereafter, the film 15 is transformed to the CO2 or H2O state by plasma-etching the surface of the substrate 14 with oxigen gas or air as reaction gas, and the film 15 is removed. Then, the glass powder 16 is sintered and a glass passivation film 17 is formed, thereby a high-reliability semiconductor device is constituted.
COPYRIGHT: (C)1980,JPO&Japio
JP11768378A 1978-09-25 1978-09-25 Manufacturing semiconductor device Pending JPS5544718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11768378A JPS5544718A (en) 1978-09-25 1978-09-25 Manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11768378A JPS5544718A (en) 1978-09-25 1978-09-25 Manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5544718A true JPS5544718A (en) 1980-03-29

Family

ID=14717698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11768378A Pending JPS5544718A (en) 1978-09-25 1978-09-25 Manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5544718A (en)

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