JPS5339873A - Etching method of silicon semiconductor substrate containing gold - Google Patents

Etching method of silicon semiconductor substrate containing gold

Info

Publication number
JPS5339873A
JPS5339873A JP11370076A JP11370076A JPS5339873A JP S5339873 A JPS5339873 A JP S5339873A JP 11370076 A JP11370076 A JP 11370076A JP 11370076 A JP11370076 A JP 11370076A JP S5339873 A JPS5339873 A JP S5339873A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
etching method
silicon semiconductor
substrate containing
containing gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11370076A
Other languages
Japanese (ja)
Inventor
Yukio Murayama
Hiroshi Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11370076A priority Critical patent/JPS5339873A/en
Publication of JPS5339873A publication Critical patent/JPS5339873A/en
Pending legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: To make a flat surface by etching a wafer with a solution mainly composed of hydrofluoric acid, nitric acid and hydrochloric acid, and simultaneously etching the gold and gold-Si eutective alloy within the wafer.
COPYRIGHT: (C)1978,JPO&Japio
JP11370076A 1976-09-24 1976-09-24 Etching method of silicon semiconductor substrate containing gold Pending JPS5339873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11370076A JPS5339873A (en) 1976-09-24 1976-09-24 Etching method of silicon semiconductor substrate containing gold

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11370076A JPS5339873A (en) 1976-09-24 1976-09-24 Etching method of silicon semiconductor substrate containing gold

Publications (1)

Publication Number Publication Date
JPS5339873A true JPS5339873A (en) 1978-04-12

Family

ID=14618950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11370076A Pending JPS5339873A (en) 1976-09-24 1976-09-24 Etching method of silicon semiconductor substrate containing gold

Country Status (1)

Country Link
JP (1) JPS5339873A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986784A (en) * 1982-11-10 1984-05-19 日立金属株式会社 Method of connecting pipe
JPS6228591A (en) * 1985-07-30 1987-02-06 日本金属工業株式会社 Method of molding steel pipe joint made of stainless steel having improved fixing sealing property
CN115873600A (en) * 2022-11-28 2023-03-31 武汉高芯科技有限公司 Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986784A (en) * 1982-11-10 1984-05-19 日立金属株式会社 Method of connecting pipe
JPS6228591A (en) * 1985-07-30 1987-02-06 日本金属工業株式会社 Method of molding steel pipe joint made of stainless steel having improved fixing sealing property
CN115873600A (en) * 2022-11-28 2023-03-31 武汉高芯科技有限公司 Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film
CN115873600B (en) * 2022-11-28 2024-05-07 武汉高芯科技有限公司 Punching corrosive liquid and punching method for cadmium telluride/zinc sulfide double-layer passivation film

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