JPS55128844A - Semiconductor device - Google Patents

Abstract

PURPOSE: To form a flat surface of a semiconductor device by forming an oxide film having wider opening than the width of a mesa groove formed later on a semiconductor substrate formed with a pn junction, and coating a glass layer including the surface of the substrate exposed on both sides of the groove after perforating the groove.

CONSTITUTION: A SiO₂ film 12 is coated on the surface of a silicon substrate 11 formed with emitter region, base region, etc., and a wider opening 12 than the width of a mesa groove 15 is performed at the film 12 at the position corresponding to the groove 15. With a photoresist film 14 as a mask the film 12 is etched to form a mesa groove 15 through the pn junction, the film 14 is then removed, and the surface 16 of the substrate 11 is exposed at the peripheral edge of the groove 15. Thereafter, glass powder 15 is filled in the groove 15 by an electrophoresis, simultaneously spread on the exposed surface 16 of the substrate 11 in a sufficient thickness. It is then calcined to form a glass passivation film 18 in silightly reduced volume. Thus, the surface of the substrate may be flat. Accordingly, no stepwise disconnection occurs at the wire of the electrode on the substrate.

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