JPS54146970A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54146970A JPS54146970A JP5577678A JP5577678A JPS54146970A JP S54146970 A JPS54146970 A JP S54146970A JP 5577678 A JP5577678 A JP 5577678A JP 5577678 A JP5577678 A JP 5577678A JP S54146970 A JPS54146970 A JP S54146970A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- contact window
- emitter
- base contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To enlarge an electrode superposition margin to improve dielectric strength by forming a base region on a semiconductor substrate and causing a poly- crystal Si layer including impurity, which becomes the diffusion source for emitter region formation, to adhere to the surface near a base contact window.
CONSTITUTION: SiO2 film 1 is formed in a part other than region 3 on the Si substrate where base region 3 is formed, and thin SiO2 film 3 is caused to adhere to all the surface. Next, poly-crystal Si layer 5 including impurity for emitter region formation is accumulated on an active region except the region on the base contact window. At this time, layer 5 is formed up to the part near the base contact window to generate margin in both sides of the emitter contact window, so that the exposure of emitter junction dependent upon positional slip-page may be eliminated to prevent the generation of dielectric strength defects. After that, layer 5 is used as a diffusion source to form emitter region 6, and Pt silicide layer 7 is caused to adhere onto the base contact window and layer 5. Then, metal 8 for electrode is provided throughout the surface, and resin film pattern 9 is used as a mask to etch metal 8, thereby obtaining leading-out electrode 8' having a desired shape.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5577678A JPS54146970A (en) | 1978-05-10 | 1978-05-10 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5577678A JPS54146970A (en) | 1978-05-10 | 1978-05-10 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54146970A true JPS54146970A (en) | 1979-11-16 |
Family
ID=13008276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5577678A Pending JPS54146970A (en) | 1978-05-10 | 1978-05-10 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54146970A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03179772A (en) * | 1989-12-08 | 1991-08-05 | Toshiba Corp | Semiconductor device |
-
1978
- 1978-05-10 JP JP5577678A patent/JPS54146970A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03179772A (en) * | 1989-12-08 | 1991-08-05 | Toshiba Corp | Semiconductor device |
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