JPS544575A - Production of semiconductor devices - Google Patents

Production of semiconductor devices

Info

Publication number
JPS544575A
JPS544575A JP7013877A JP7013877A JPS544575A JP S544575 A JPS544575 A JP S544575A JP 7013877 A JP7013877 A JP 7013877A JP 7013877 A JP7013877 A JP 7013877A JP S544575 A JPS544575 A JP S544575A
Authority
JP
Japan
Prior art keywords
openings
insulating film
production
semiconductor devices
base regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7013877A
Other languages
Japanese (ja)
Other versions
JPS6139745B2 (en
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7013877A priority Critical patent/JPS544575A/en
Publication of JPS544575A publication Critical patent/JPS544575A/en
Publication of JPS6139745B2 publication Critical patent/JPS6139745B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain a fine patterns by depositing first, second insulating films on a semiconductor substrate surface formed with base regions, providing openings in the first insulating film, etching the openings of an area larger than that of the openings in the second insulating film, forming emitter regions in the base regions, thereafter burying the openings with a third insulating film.
COPYRIGHT: (C)1979,JPO&Japio
JP7013877A 1977-06-13 1977-06-13 Production of semiconductor devices Granted JPS544575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7013877A JPS544575A (en) 1977-06-13 1977-06-13 Production of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7013877A JPS544575A (en) 1977-06-13 1977-06-13 Production of semiconductor devices

Publications (2)

Publication Number Publication Date
JPS544575A true JPS544575A (en) 1979-01-13
JPS6139745B2 JPS6139745B2 (en) 1986-09-05

Family

ID=13422900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7013877A Granted JPS544575A (en) 1977-06-13 1977-06-13 Production of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS544575A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206158A (en) * 1982-05-27 1983-12-01 Toshiba Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206158A (en) * 1982-05-27 1983-12-01 Toshiba Corp Manufacture of semiconductor device
JPH0155585B2 (en) * 1982-05-27 1989-11-27 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6139745B2 (en) 1986-09-05

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