JPS57120342A - Manufacture of glass passivation semiconductor device - Google Patents

Manufacture of glass passivation semiconductor device

Info

Publication number
JPS57120342A
JPS57120342A JP56004615A JP461581A JPS57120342A JP S57120342 A JPS57120342 A JP S57120342A JP 56004615 A JP56004615 A JP 56004615A JP 461581 A JP461581 A JP 461581A JP S57120342 A JPS57120342 A JP S57120342A
Authority
JP
Japan
Prior art keywords
film
glass
grooves
region
passivation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56004615A
Other languages
Japanese (ja)
Inventor
Michio Ichikawa
Shigefumi Kadowaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56004615A priority Critical patent/JPS57120342A/en
Publication of JPS57120342A publication Critical patent/JPS57120342A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To avoid the adherence of glass powder particles to other material by covering a resist film except the grooves when grooves are formed in a semiconductor substrate formed with a P-N junction and glass for passivation is filled therein. CONSTITUTION:An SiO2 film is covered on a semiconductor substrate 2 formed with a P-N junction, is then etched with a photoresist film of the prescribed pattern as a mask, and an electrode contacting region and a glass passivation region are removed. Then, deep grooves 3 are opened in the passivation region, photoresist film 7 is covered on the overall surface, the passivation region is removed, and the exposed grooves 3 are buried with glass film 4 by an electrophoresis. Thereafter, it is heat treated to bake the film 4, the film 7 is then vanished, a resist film 7' is again provided, and a window is opened corresponding to the contacting region 5, an aluminum electrode film is formed thereon, and the film 7' is removed.
JP56004615A 1981-01-17 1981-01-17 Manufacture of glass passivation semiconductor device Pending JPS57120342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56004615A JPS57120342A (en) 1981-01-17 1981-01-17 Manufacture of glass passivation semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56004615A JPS57120342A (en) 1981-01-17 1981-01-17 Manufacture of glass passivation semiconductor device

Publications (1)

Publication Number Publication Date
JPS57120342A true JPS57120342A (en) 1982-07-27

Family

ID=11588957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56004615A Pending JPS57120342A (en) 1981-01-17 1981-01-17 Manufacture of glass passivation semiconductor device

Country Status (1)

Country Link
JP (1) JPS57120342A (en)

Similar Documents

Publication Publication Date Title
JPS54148484A (en) Manufacture of semiconductor wafer test device
JPS57154855A (en) Manufacture of semiconductor device
JPS57120342A (en) Manufacture of glass passivation semiconductor device
JPS53120527A (en) Forming method of positive type radiation sensitive material layer
JPS5415669A (en) Manufacture of mesa-type semiconductor device
JPS5466768A (en) Forming method of electrode window in semiconductor device
SE8503834D0 (en) SET TO MANUFACTURE SOLAR CELLS
JPS54162484A (en) Manufacture of semiconductor device
JPS5743431A (en) Manufacture of semiconductor device
JPS5370769A (en) Production of semiconductor device
JPS55128844A (en) Semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS57145330A (en) Manufacture of semiconductor device
JPS57124434A (en) Manufacture of semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS52117550A (en) Electrode formation method
JPS57102051A (en) Manufacture of semiconductor device
JPS5690539A (en) Production of semiconductor device
JPS53118371A (en) Manufacture of semiconductor device
JPS53112673A (en) Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution
JPS6450560A (en) Manufacture of semiconductor device
JPS5478666A (en) Forming method of glass film for mesa-type semiconductor device
JPS56146225A (en) Manufacture of germanium semiconductor device
JPS56108266A (en) Semiconductor device and manufacture thereof
JPS53118993A (en) Manufacture for semiconductor device