JPS57124434A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57124434A
JPS57124434A JP910481A JP910481A JPS57124434A JP S57124434 A JPS57124434 A JP S57124434A JP 910481 A JP910481 A JP 910481A JP 910481 A JP910481 A JP 910481A JP S57124434 A JPS57124434 A JP S57124434A
Authority
JP
Japan
Prior art keywords
resist layer
laminated
coated
sensitive
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP910481A
Other languages
Japanese (ja)
Inventor
Chiharu Kato
Hatsuo Nakamura
Toshihiro Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP910481A priority Critical patent/JPS57124434A/en
Publication of JPS57124434A publication Critical patent/JPS57124434A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To easily remove the resist layer for subject semiconductor element by a method wherein positive type resist layers consisting of two layers, having different photosensitive wavelength limits, are laminated when the electrode forming process of the lift-off method is used. CONSTITUTION:A silicon oxide layer 5 and a nitride silicon layer 25 are laminated on a silicon substrate 1 having a P-N junction, and an aperture is opened at the laminated section. After a positive resist layer 44a, sensitive to a far ultraviolet ray region, has been coated on the whole surface of the substrate and a prebaking has been performed, a positive resist 44b which is sensitive to a near ultraviolet ray region is coated. The sensitive part of the resist layer 44b is removed by irradiating near ultraviolet rays using a mask 7, and the sensitive part of the resist layer 44a is removed by irradiating far ultraviolet rays. When electrode layers 13 and 13' are coated, as a laminated resist layer is overhangingly formed, the electrode layers can be positively separated, and the resist layer can be removed easily.
JP910481A 1981-01-26 1981-01-26 Manufacture of semiconductor device Pending JPS57124434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP910481A JPS57124434A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP910481A JPS57124434A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57124434A true JPS57124434A (en) 1982-08-03

Family

ID=11711314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP910481A Pending JPS57124434A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57124434A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6366939A (en) * 1986-03-11 1988-03-25 テキサス　インスツルメンツ　インコ−ポレイテツド Manufacture of integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6366939A (en) * 1986-03-11 1988-03-25 テキサス　インスツルメンツ　インコ−ポレイテツド Manufacture of integrated circuit

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