JPS55134947A - Pelletizing method of thin film resistor wafer - Google Patents
Pelletizing method of thin film resistor waferInfo
- Publication number
- JPS55134947A JPS55134947A JP4406779A JP4406779A JPS55134947A JP S55134947 A JPS55134947 A JP S55134947A JP 4406779 A JP4406779 A JP 4406779A JP 4406779 A JP4406779 A JP 4406779A JP S55134947 A JPS55134947 A JP S55134947A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- etching
- resistor
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To remove pinhole generation in the protective film of a resistor by a method wherein a semiconductor substrate, on which a film resistor and an electrode layer are formed, is covered with protective film, bonding windows and a scribe line are formed using a photo resist layer and pelletized by a roller pressing method. CONSTITUTION:On an Si substrate 11, on which SiO2 film 12 is attached, a film resistor 14 and electrode layers 15 and 15' are formed by vacuum evaporation to be made prescribed-shaped by a photolytic method and an etching method. Next, the whole surface is convered with SiO2 film 16 and thereon a photo resist layer is applied to be made into a prescribed pattern by photo etching. Thereafter, under the mask thereof a scribe-recognizing line 19 and bonding windows 20 and 20' are provided by etching film 16 and a separating cut is formed by dicing the remaining layer 18 along the recognizing line 19 using said layer as protective film for separating cut.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4406779A JPS55134947A (en) | 1979-04-10 | 1979-04-10 | Pelletizing method of thin film resistor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4406779A JPS55134947A (en) | 1979-04-10 | 1979-04-10 | Pelletizing method of thin film resistor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55134947A true JPS55134947A (en) | 1980-10-21 |
Family
ID=12681275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4406779A Pending JPS55134947A (en) | 1979-04-10 | 1979-04-10 | Pelletizing method of thin film resistor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55134947A (en) |
-
1979
- 1979-04-10 JP JP4406779A patent/JPS55134947A/en active Pending
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