JPS5596640A - Method of forming glass film on semiconductor substrate - Google Patents

Method of forming glass film on semiconductor substrate

Info

Publication number
JPS5596640A
JPS5596640A JP397179A JP397179A JPS5596640A JP S5596640 A JPS5596640 A JP S5596640A JP 397179 A JP397179 A JP 397179A JP 397179 A JP397179 A JP 397179A JP S5596640 A JPS5596640 A JP S5596640A
Authority
JP
Japan
Prior art keywords
glass
substrate
film
layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP397179A
Other languages
Japanese (ja)
Inventor
Yasumichi Yasuda
Tomoyuki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP397179A priority Critical patent/JPS5596640A/en
Publication of JPS5596640A publication Critical patent/JPS5596640A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a glass film on a semiconductor substrate by superimposing a glass particle layer and a photo resist layer sequentially on the substrate, selectively exposing and developing, and heating to fuse the layers.
CONSTITUTION: A mesa groove reaching a pn junction is provided around an element region formed on a silicon substrate 1, and a glass particle layer 4 is selectively formed at the groove according to an electrophoresis. At this time unnecessary glass 5 is adhered also on the SiO2 film. Then, photo resist is coated on the substrate, exposed and developed to selectively form a resist layer 6. Since the unnecessary glass 5 has weak adhesion with the SiO2 film, it is removed at developing time. Then, the layer 6 is burnt ash by a plasma, and thus removed to thus complete formation of the glass on the substrate by heating to fuse the glass particle layer 4.
COPYRIGHT: (C)1980,JPO&Japio
JP397179A 1979-01-19 1979-01-19 Method of forming glass film on semiconductor substrate Pending JPS5596640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP397179A JPS5596640A (en) 1979-01-19 1979-01-19 Method of forming glass film on semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP397179A JPS5596640A (en) 1979-01-19 1979-01-19 Method of forming glass film on semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5596640A true JPS5596640A (en) 1980-07-23

Family

ID=11571950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP397179A Pending JPS5596640A (en) 1979-01-19 1979-01-19 Method of forming glass film on semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5596640A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017135094A1 (en) * 2016-02-05 2017-08-10 新電元工業株式会社 Method for producing semiconductor device
JP6396598B1 (en) * 2017-04-19 2018-09-26 新電元工業株式会社 Manufacturing method of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017135094A1 (en) * 2016-02-05 2017-08-10 新電元工業株式会社 Method for producing semiconductor device
JP6235190B1 (en) * 2016-02-05 2017-11-22 新電元工業株式会社 Manufacturing method of semiconductor device
JP6396598B1 (en) * 2017-04-19 2018-09-26 新電元工業株式会社 Manufacturing method of semiconductor device

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