JPS5497390A - Manufacture of semiconductor photo detector - Google Patents
Manufacture of semiconductor photo detectorInfo
- Publication number
- JPS5497390A JPS5497390A JP372378A JP372378A JPS5497390A JP S5497390 A JPS5497390 A JP S5497390A JP 372378 A JP372378 A JP 372378A JP 372378 A JP372378 A JP 372378A JP S5497390 A JPS5497390 A JP S5497390A
- Authority
- JP
- Japan
- Prior art keywords
- region
- photo
- diffusion
- thickness
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To obtain a photo detector of high photo-sensitivity by diffusion-forming a unidirectionally-conductive region on a reversely-conductive semiconductor substrate and by making the thickness of this area thin by etching it from the exposed surface.
CONSTITUTION: At the edge of the surface of N-type Si substrate 1, electrode- leading-out N+-type region 11 is diffusion-formed and after both edges are covered with SiO2 films 10, P-type region 12, a photo detection region, is diffusion-formed at the center of substrate 1, thereby producing PN junction 13. Next, the exposed surface of this region 12 is etched into thin region 12', which is covered with light- reflective layer 20 and after an opening is made in film 10, an electrode to be connected to region 11 is fitted. In this way, region 12 is between 0.7 to 1.0μm in thickness first and then etched to a thickness 0.3μm. Therefore, the process until the formation of PN junction 13 is simplified and the photo-sensitivity improves by 15 to 20% by making region 12 thin.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP372378A JPS5497390A (en) | 1978-01-19 | 1978-01-19 | Manufacture of semiconductor photo detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP372378A JPS5497390A (en) | 1978-01-19 | 1978-01-19 | Manufacture of semiconductor photo detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5497390A true JPS5497390A (en) | 1979-08-01 |
Family
ID=11565202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP372378A Pending JPS5497390A (en) | 1978-01-19 | 1978-01-19 | Manufacture of semiconductor photo detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5497390A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473774A (en) * | 1987-09-16 | 1989-03-20 | Sumitomo Electric Industries | Pin photodiode of ingaas/inp |
-
1978
- 1978-01-19 JP JP372378A patent/JPS5497390A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473774A (en) * | 1987-09-16 | 1989-03-20 | Sumitomo Electric Industries | Pin photodiode of ingaas/inp |
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