JPS55143031A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55143031A JPS55143031A JP5124179A JP5124179A JPS55143031A JP S55143031 A JPS55143031 A JP S55143031A JP 5124179 A JP5124179 A JP 5124179A JP 5124179 A JP5124179 A JP 5124179A JP S55143031 A JPS55143031 A JP S55143031A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- diffused layer
- glass
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 239000000758 substrate Substances 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To heighten the dimensional accuracy of a diffused layer, by providing an SiO2 film of a prescribed pattern on an Si substrate, coating a glass-like film of an organic Si compound which contains an impurity inverse in electroconductive type to the substrate, removing the part of the glass-like film on the SiO2 film and using the glass-like film left on the surface of the substrate, as a diffused substance source. CONSTITUTION:An SiO2 film 2 is coated on a p-type Si substrate 1. The part of the film 2 corresponding to a to-be-produced diffused layer is removed by photographic etching so that the other part 2A of the film 2 is left. An organic Si compound dissolved in an organic solvent and containing an n-type impurity is uniformly coated over the substrate 1. The solvent is evaporated to provide a silica film 3. A photoresist film 4 is made on the film 3 and patterned so that a film 4A is provided as a mask on only a diffused layer making part. Etching is effected while using the film 4A as a mask, thereby removing the film 3 located aon the film 2A. The film 3A left on the diffused layer making part is used as a diffused substance source to produce an n-type region in the substrate 1 by diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5124179A JPS55143031A (en) | 1979-04-25 | 1979-04-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5124179A JPS55143031A (en) | 1979-04-25 | 1979-04-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55143031A true JPS55143031A (en) | 1980-11-08 |
Family
ID=12881441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5124179A Pending JPS55143031A (en) | 1979-04-25 | 1979-04-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55143031A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58110036A (en) * | 1981-12-23 | 1983-06-30 | Matsushita Electronics Corp | Diffusion of impurity |
| JPS58168221A (en) * | 1982-03-29 | 1983-10-04 | Toshiba Corp | Preparation of semiconductor device |
| JPH03250729A (en) * | 1990-02-28 | 1991-11-08 | Rohm Co Ltd | Manufacture of semiconductor element |
-
1979
- 1979-04-25 JP JP5124179A patent/JPS55143031A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58110036A (en) * | 1981-12-23 | 1983-06-30 | Matsushita Electronics Corp | Diffusion of impurity |
| JPS58168221A (en) * | 1982-03-29 | 1983-10-04 | Toshiba Corp | Preparation of semiconductor device |
| JPH03250729A (en) * | 1990-02-28 | 1991-11-08 | Rohm Co Ltd | Manufacture of semiconductor element |
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