JPS57102051A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57102051A
JPS57102051A JP17838480A JP17838480A JPS57102051A JP S57102051 A JPS57102051 A JP S57102051A JP 17838480 A JP17838480 A JP 17838480A JP 17838480 A JP17838480 A JP 17838480A JP S57102051 A JPS57102051 A JP S57102051A
Authority
JP
Japan
Prior art keywords
layer
wiring
insulating
enable
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17838480A
Other languages
Japanese (ja)
Inventor
Hiroshi Tokunaga
Ryoji Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17838480A priority Critical patent/JPS57102051A/en
Publication of JPS57102051A publication Critical patent/JPS57102051A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enable to flatten easily the surface of an insulating layer on the first layer of wiring layer, and to prevent disconnection, etc., of the second layer of wiring layer to be formed on the insulating layer. CONSTITUTION:An SiO2 film 3 is formed on the surface of a semiconductor substrate 1, and the first layer 4 of wiring layer of Al is provided thereon. The insulating layer 5 of PSG is formed on the upper face of the film 3 and the layer 4. A photoresist layer 8 is applied on the layer 5. The layer 8 is etched physically, the convex parts 7 of the layer 5 are exposed, and the layer 8 is made as to remain at the concave parts 6. The convex parts 7 of the layer 5 are etched up to have the same height with the concave parts 6 making the remaining part of the layer 8 as the mask. The layer 8 is removed from the surface of the layer 5 by a resist peeling off liquid to enable to obtain the flattened layer 5. After then, the second layer of wiring layer is formed on the layer 5.
JP17838480A 1980-12-17 1980-12-17 Manufacture of semiconductor device Pending JPS57102051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17838480A JPS57102051A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17838480A JPS57102051A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57102051A true JPS57102051A (en) 1982-06-24

Family

ID=16047543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17838480A Pending JPS57102051A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102051A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645327A (en) * 1991-01-09 1994-02-18 Nec Corp Semiconductor device and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231686A (en) * 1975-09-05 1977-03-10 Hitachi Ltd Production method of semiconductor device
JPS5261980A (en) * 1975-11-18 1977-05-21 Toshiba Corp Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231686A (en) * 1975-09-05 1977-03-10 Hitachi Ltd Production method of semiconductor device
JPS5261980A (en) * 1975-11-18 1977-05-21 Toshiba Corp Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645327A (en) * 1991-01-09 1994-02-18 Nec Corp Semiconductor device and manufacture thereof

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