JPS57102051A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57102051A JPS57102051A JP17838480A JP17838480A JPS57102051A JP S57102051 A JPS57102051 A JP S57102051A JP 17838480 A JP17838480 A JP 17838480A JP 17838480 A JP17838480 A JP 17838480A JP S57102051 A JPS57102051 A JP S57102051A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- insulating
- enable
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To enable to flatten easily the surface of an insulating layer on the first layer of wiring layer, and to prevent disconnection, etc., of the second layer of wiring layer to be formed on the insulating layer. CONSTITUTION:An SiO2 film 3 is formed on the surface of a semiconductor substrate 1, and the first layer 4 of wiring layer of Al is provided thereon. The insulating layer 5 of PSG is formed on the upper face of the film 3 and the layer 4. A photoresist layer 8 is applied on the layer 5. The layer 8 is etched physically, the convex parts 7 of the layer 5 are exposed, and the layer 8 is made as to remain at the concave parts 6. The convex parts 7 of the layer 5 are etched up to have the same height with the concave parts 6 making the remaining part of the layer 8 as the mask. The layer 8 is removed from the surface of the layer 5 by a resist peeling off liquid to enable to obtain the flattened layer 5. After then, the second layer of wiring layer is formed on the layer 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17838480A JPS57102051A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17838480A JPS57102051A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57102051A true JPS57102051A (en) | 1982-06-24 |
Family
ID=16047543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17838480A Pending JPS57102051A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57102051A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0645327A (en) * | 1991-01-09 | 1994-02-18 | Nec Corp | Semiconductor device and manufacture thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5231686A (en) * | 1975-09-05 | 1977-03-10 | Hitachi Ltd | Production method of semiconductor device |
JPS5261980A (en) * | 1975-11-18 | 1977-05-21 | Toshiba Corp | Production of semiconductor device |
-
1980
- 1980-12-17 JP JP17838480A patent/JPS57102051A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5231686A (en) * | 1975-09-05 | 1977-03-10 | Hitachi Ltd | Production method of semiconductor device |
JPS5261980A (en) * | 1975-11-18 | 1977-05-21 | Toshiba Corp | Production of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0645327A (en) * | 1991-01-09 | 1994-02-18 | Nec Corp | Semiconductor device and manufacture thereof |
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