JPS6489540A - Formation of wiring pattern - Google Patents

Formation of wiring pattern

Info

Publication number
JPS6489540A
JPS6489540A JP24738587A JP24738587A JPS6489540A JP S6489540 A JPS6489540 A JP S6489540A JP 24738587 A JP24738587 A JP 24738587A JP 24738587 A JP24738587 A JP 24738587A JP S6489540 A JPS6489540 A JP S6489540A
Authority
JP
Japan
Prior art keywords
photoresist
mask
wiring pattern
wiring
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24738587A
Other languages
Japanese (ja)
Inventor
Michiyuki Sugihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24738587A priority Critical patent/JPS6489540A/en
Publication of JPS6489540A publication Critical patent/JPS6489540A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make a wiring pattern to come in contact with a step even when a second mask is formed staggeredly with respect to the step by coating a part of a wiring layer formed within the step on a substrate with a first mask formed in advance. CONSTITUTION:When a semiconductor device is developed after exposure to light using a mask 7A, the exposed part of a photoresist 6 is partially removed. Then a masking layer 6A is formed by etching the photoresist 6 and leaving the photoresist only in an opened hole 4 with a wiring film 5 interposed therebetween. When a photoresist 11, after formed on the masking layer 6A and wiring film 5, is exposed to light with a photomask 12 as a mask and developed, the photoresist 11 remains as a masking layer 11A. Then the wiring film 5, etched with the masking layers 11A, 6A as a mask, remains as a wiring pattern 5A. Then the masking layers 11A, 6A are removed. According to the constitution, a wiring pattern whose step is in good contact can be obtained.
JP24738587A 1987-09-30 1987-09-30 Formation of wiring pattern Pending JPS6489540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24738587A JPS6489540A (en) 1987-09-30 1987-09-30 Formation of wiring pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24738587A JPS6489540A (en) 1987-09-30 1987-09-30 Formation of wiring pattern

Publications (1)

Publication Number Publication Date
JPS6489540A true JPS6489540A (en) 1989-04-04

Family

ID=17162643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24738587A Pending JPS6489540A (en) 1987-09-30 1987-09-30 Formation of wiring pattern

Country Status (1)

Country Link
JP (1) JPS6489540A (en)

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