JPS56135944A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56135944A JPS56135944A JP3989480A JP3989480A JPS56135944A JP S56135944 A JPS56135944 A JP S56135944A JP 3989480 A JP3989480 A JP 3989480A JP 3989480 A JP3989480 A JP 3989480A JP S56135944 A JPS56135944 A JP S56135944A
- Authority
- JP
- Japan
- Prior art keywords
- window
- photoresist
- insulating film
- disconnection
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To provide electrode wiring and multilayer wiring free from disconnection by applying selective etching to an insulating film by using as a mask a photoresist pattern provided on the insulating film on a substrate, connecting electroconductive material on to the whole surface, lifting off the same later and removing the photoresist. CONSTITUTION:The insulating film 12 is connected on to the semiconductor substrate 10, the photoresist 16 is coated thereon, and a window is opened by patterning. By using the photoresist with the window as a mask, the insulating film 12 is etched to open a window therein and Al is evaporated on the whole surface thereof. An Al layer 18 is formed also on the part of the window. After that, when the photoresist is removed by lifting off, the Al layer in the part of the window remains. Then, Al is evaporated again and thereby a desired Al electrode wiring is obtained. By this method, the electrode multilayer wiring free from level-difference and disconnection can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3989480A JPS56135944A (en) | 1980-03-28 | 1980-03-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3989480A JPS56135944A (en) | 1980-03-28 | 1980-03-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56135944A true JPS56135944A (en) | 1981-10-23 |
Family
ID=12565661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3989480A Pending JPS56135944A (en) | 1980-03-28 | 1980-03-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56135944A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0442718A2 (en) * | 1990-02-14 | 1991-08-21 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US5266835A (en) * | 1988-02-02 | 1993-11-30 | National Semiconductor Corporation | Semiconductor structure having a barrier layer disposed within openings of a dielectric layer |
-
1980
- 1980-03-28 JP JP3989480A patent/JPS56135944A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5266835A (en) * | 1988-02-02 | 1993-11-30 | National Semiconductor Corporation | Semiconductor structure having a barrier layer disposed within openings of a dielectric layer |
EP0442718A2 (en) * | 1990-02-14 | 1991-08-21 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
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