JPS56135944A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56135944A
JPS56135944A JP3989480A JP3989480A JPS56135944A JP S56135944 A JPS56135944 A JP S56135944A JP 3989480 A JP3989480 A JP 3989480A JP 3989480 A JP3989480 A JP 3989480A JP S56135944 A JPS56135944 A JP S56135944A
Authority
JP
Japan
Prior art keywords
window
photoresist
insulating film
disconnection
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3989480A
Other languages
Japanese (ja)
Inventor
Yoshihiro Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3989480A priority Critical patent/JPS56135944A/en
Publication of JPS56135944A publication Critical patent/JPS56135944A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To provide electrode wiring and multilayer wiring free from disconnection by applying selective etching to an insulating film by using as a mask a photoresist pattern provided on the insulating film on a substrate, connecting electroconductive material on to the whole surface, lifting off the same later and removing the photoresist. CONSTITUTION:The insulating film 12 is connected on to the semiconductor substrate 10, the photoresist 16 is coated thereon, and a window is opened by patterning. By using the photoresist with the window as a mask, the insulating film 12 is etched to open a window therein and Al is evaporated on the whole surface thereof. An Al layer 18 is formed also on the part of the window. After that, when the photoresist is removed by lifting off, the Al layer in the part of the window remains. Then, Al is evaporated again and thereby a desired Al electrode wiring is obtained. By this method, the electrode multilayer wiring free from level-difference and disconnection can be formed.
JP3989480A 1980-03-28 1980-03-28 Manufacture of semiconductor device Pending JPS56135944A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3989480A JPS56135944A (en) 1980-03-28 1980-03-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3989480A JPS56135944A (en) 1980-03-28 1980-03-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56135944A true JPS56135944A (en) 1981-10-23

Family

ID=12565661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3989480A Pending JPS56135944A (en) 1980-03-28 1980-03-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56135944A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0442718A2 (en) * 1990-02-14 1991-08-21 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer
EP0442718A2 (en) * 1990-02-14 1991-08-21 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

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