JPS568834A - Manufacture of projection for substrate conductor layer - Google Patents
Manufacture of projection for substrate conductor layerInfo
- Publication number
- JPS568834A JPS568834A JP8374279A JP8374279A JPS568834A JP S568834 A JPS568834 A JP S568834A JP 8374279 A JP8374279 A JP 8374279A JP 8374279 A JP8374279 A JP 8374279A JP S568834 A JPS568834 A JP S568834A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- projection
- conductor layer
- resist
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
Abstract
PURPOSE:To shorten the steps of forming a projection made of a conductor layer for electrically connecting with the semiconductor element on a tape carrier and eliminate the isolation of a surface resist by executing the surface resist coating step after a back surface patterning step when forming the projection thereon. CONSTITUTION:Conductor layers 20 are coated and etched on a region of an insulating tape carrier 1 provided with conveying sprocket holes 5 at both side edges to form a connecting terminal 22 as below. That is, a conductor layer 20 made of copper foil or the like is coated on the respective regions of the carrier 1, a resist layer is formed on the back surface thereof, is patterned to form a mask 4 of the resist layer through the opening of the carrier 1. Thereafter, a protective resist layer 30 is coated on the surface of the conductor layer 20, is etched from the back surface to form a projection 21 on the layer 20. Thereafter, the layer 30 is modified to a resist layer 31 having predetermined pattern, the protective resist layer 60 is buried in the opening, is etched from the surface, the conductor layer 20 is retained as a connecting terminal 22 containing the projection 21, and the layer 60 is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8374279A JPS568834A (en) | 1979-07-02 | 1979-07-02 | Manufacture of projection for substrate conductor layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8374279A JPS568834A (en) | 1979-07-02 | 1979-07-02 | Manufacture of projection for substrate conductor layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS568834A true JPS568834A (en) | 1981-01-29 |
JPS628945B2 JPS628945B2 (en) | 1987-02-25 |
Family
ID=13810970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8374279A Granted JPS568834A (en) | 1979-07-02 | 1979-07-02 | Manufacture of projection for substrate conductor layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568834A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57204157A (en) * | 1981-06-11 | 1982-12-14 | Shindo Denshi Kogyo Kk | Manufacture of wiring section for mounting chip |
JPS57204158A (en) * | 1981-06-11 | 1982-12-14 | Shindo Denshi Kogyo Kk | Manufacture of wiring section for mounting chip |
US6740148B2 (en) | 1999-09-24 | 2004-05-25 | Nasa Auto | Exhaust gas cleaner |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS546775A (en) * | 1977-06-17 | 1979-01-19 | Nec Corp | Semiconductor device featuring stepped electrode structure |
-
1979
- 1979-07-02 JP JP8374279A patent/JPS568834A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS546775A (en) * | 1977-06-17 | 1979-01-19 | Nec Corp | Semiconductor device featuring stepped electrode structure |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57204157A (en) * | 1981-06-11 | 1982-12-14 | Shindo Denshi Kogyo Kk | Manufacture of wiring section for mounting chip |
JPS57204158A (en) * | 1981-06-11 | 1982-12-14 | Shindo Denshi Kogyo Kk | Manufacture of wiring section for mounting chip |
US6740148B2 (en) | 1999-09-24 | 2004-05-25 | Nasa Auto | Exhaust gas cleaner |
Also Published As
Publication number | Publication date |
---|---|
JPS628945B2 (en) | 1987-02-25 |
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