JPS56155552A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56155552A
JPS56155552A JP5880480A JP5880480A JPS56155552A JP S56155552 A JPS56155552 A JP S56155552A JP 5880480 A JP5880480 A JP 5880480A JP 5880480 A JP5880480 A JP 5880480A JP S56155552 A JPS56155552 A JP S56155552A
Authority
JP
Japan
Prior art keywords
opening
resist mask
semiconductor device
psg
breaking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5880480A
Other languages
Japanese (ja)
Inventor
Atsushi Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5880480A priority Critical patent/JPS56155552A/en
Publication of JPS56155552A publication Critical patent/JPS56155552A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain the semiconductor device having no breaking of wire a by method wherein a resist mask is applied on an insulating film, dry etching it performed to form an opening and after a metal film having the same thickness with the insulating film is adhered thereon, the resist mask is removed to remain the metal in the opening. CONSTITUTION:The resist mask 7 is provided on the PSG 2 on an Si substrate 1, and the opening 3 is formed by dry etching. When Al layers 8, 8' are adhered thereon, the surface becomes uncontinuous because of the existence of the step part. The lift off technique is applied, and Al 8 is filled up in the opening 3 to the same thickness with the PSG 2. When an Al wiring 9 is formed next, breaking of wire is not generated because of the flatness of ground.
JP5880480A 1980-05-02 1980-05-02 Manufacture of semiconductor device Pending JPS56155552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5880480A JPS56155552A (en) 1980-05-02 1980-05-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5880480A JPS56155552A (en) 1980-05-02 1980-05-02 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56155552A true JPS56155552A (en) 1981-12-01

Family

ID=13094777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5880480A Pending JPS56155552A (en) 1980-05-02 1980-05-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56155552A (en)

Similar Documents

Publication Publication Date Title
JPS55163860A (en) Manufacture of semiconductor device
JPS6437840A (en) Manufacture of semiconductor device with planar structure
EP0288052A3 (en) Semiconductor device comprising a substrate, and production method thereof
JPS5595340A (en) Preparation of semiconductor device
JPS56155552A (en) Manufacture of semiconductor device
JPS57145340A (en) Manufacture of semiconductor device
JPS643663A (en) Forming method for fine pattern
JPS56125856A (en) Manufacture of semiconductor device
JPS575329A (en) Manufacture of semiconductor device
JPS5710249A (en) Manufacture of semiconductor device
JPS5289468A (en) Semiconductor device
JPS56161656A (en) Manufacture of semiconductor device
JPS5723224A (en) Manufacture of semiconductor integrated circuit
JPS559415A (en) Semiconductor manufacturing method
JPS54132178A (en) Semiconductor device
JPS5762542A (en) Manufacture of semiconductor device
JPS6480044A (en) Semiconductor device
GB1521431A (en) Forming conductors for electrical devices
JPS5648151A (en) Wiring formation of semiconductor device
JPS56130951A (en) Manufacture of semiconductor device
JPS56165339A (en) Semiconductor device
JPS572545A (en) Manufacture of semiconductor device
JPS5732653A (en) Manufacture of semiconductor device
JPS5797643A (en) Manufacture of semiconductor device
JPS5687346A (en) Manufacture of semiconductor device