JPS6480044A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6480044A JPS6480044A JP23658887A JP23658887A JPS6480044A JP S6480044 A JPS6480044 A JP S6480044A JP 23658887 A JP23658887 A JP 23658887A JP 23658887 A JP23658887 A JP 23658887A JP S6480044 A JPS6480044 A JP S6480044A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- wiring conductor
- hillock
- oxidized
- decreasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the formation of hillock developed from a wiring conductor without decreasing very much the volume of the wiring conductor, by coating the side faces of the wiring conductor with alumina and also coating its upper face with a metal having a high melting point. CONSTITUTION:A plasma silicon nitride film pattern 4a, a high-melting metal layer pattern 3a, and a conductor layer pattern 2a are formed through an etching process by using a resist pattern 5 as a mask. After that, the pattern 5 is removed. The whole face on a semiconductor substrate is oxidized by O2 sauntering or anodizing. The side faces of the pattern 2a are oxidized to form an alumina film 6 with a film thickness of hundreds of Angstrom . This structure prevents the formation of hillock developed from a wiring conductor without decreasing very much the volume of the wiring conductor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23658887A JPS6480044A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23658887A JPS6480044A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6480044A true JPS6480044A (en) | 1989-03-24 |
Family
ID=17002863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23658887A Pending JPS6480044A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6480044A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05182969A (en) * | 1992-01-06 | 1993-07-23 | Nec Yamagata Ltd | Semiconductor device |
US5741742A (en) * | 1993-09-10 | 1998-04-21 | Sony Corporation | Formation of aluminum-alloy pattern |
JP2010182957A (en) * | 2009-02-06 | 2010-08-19 | Seiko Instruments Inc | Semiconductor device manufacturing method, semiconductor device, and semiconductor manufacturing device |
-
1987
- 1987-09-21 JP JP23658887A patent/JPS6480044A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05182969A (en) * | 1992-01-06 | 1993-07-23 | Nec Yamagata Ltd | Semiconductor device |
US5741742A (en) * | 1993-09-10 | 1998-04-21 | Sony Corporation | Formation of aluminum-alloy pattern |
JP2010182957A (en) * | 2009-02-06 | 2010-08-19 | Seiko Instruments Inc | Semiconductor device manufacturing method, semiconductor device, and semiconductor manufacturing device |
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