JPS6430228A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6430228A JPS6430228A JP62185384A JP18538487A JPS6430228A JP S6430228 A JPS6430228 A JP S6430228A JP 62185384 A JP62185384 A JP 62185384A JP 18538487 A JP18538487 A JP 18538487A JP S6430228 A JPS6430228 A JP S6430228A
- Authority
- JP
- Japan
- Prior art keywords
- holes
- layer
- taper
- sidewalls
- connecting holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To eliminate the restriction of a taper angle in the formation of a taper and the conversion difference of pattern on the bottom surfaces of connecting holes and to obtain the connecting holes having a high aspect ratio by a method wherein the sidewalls of the connecting holes are etched with oxygen ions. CONSTITUTION:An Al wiring layer 2, which is used as a first conducting layer, is formed on a semiconductor substrate 1 having a step 1a on its surface and an SiO2 layer 3, which is used as an insulating layer having a flat surface, is formed thereon. Then, through holes 4 and 4', which are used as connecting holes, are opened in the layer 3. After this, a taper is formed on the sidewalls of the holes 4 and 4' through a selective sputter etching using oxygen ions. At this time, as the positions of the lower end parts of the holes 4 and 4' are not almost changed, there is no need to consider the conversion difference of pattern on the lower ends of the holes 4 and 4'. Then, a metal layer is adhered to form a wiring layer 6, which is used as a second conducting layer. In this case, as the sufficient taper is formed on the sidewalls of the holes 4 and 4', the layer 6 can obtain a sufficient film thickness in the holes 4 and 4' even though the aspect ratio of the holes is high.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62185384A JP2563180B2 (en) | 1987-07-27 | 1987-07-27 | Method for manufacturing semiconductor device |
DE3851802T DE3851802T2 (en) | 1987-07-20 | 1988-07-18 | Method of connecting lines through connection holes. |
EP88111550A EP0300414B1 (en) | 1987-07-20 | 1988-07-18 | Method of connecting wirings through connection hole |
KR1019880008981A KR920002863B1 (en) | 1987-07-20 | 1988-07-19 | Wire contecting method by using through-hole |
US08/101,780 US5320979A (en) | 1987-07-20 | 1993-08-03 | Method of connecting wirings through connection hole |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62185384A JP2563180B2 (en) | 1987-07-27 | 1987-07-27 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6430228A true JPS6430228A (en) | 1989-02-01 |
JP2563180B2 JP2563180B2 (en) | 1996-12-11 |
Family
ID=16169865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62185384A Expired - Fee Related JP2563180B2 (en) | 1987-07-20 | 1987-07-27 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2563180B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59148153A (en) * | 1983-02-14 | 1984-08-24 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Optical information recording reader |
JPH04132220A (en) * | 1990-09-21 | 1992-05-06 | Tokyo Ohka Kogyo Co Ltd | Plasma taper etching method |
JP2005159368A (en) * | 2003-11-27 | 2005-06-16 | Samsung Sdi Co Ltd | Flat plate display device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101033468B1 (en) * | 2009-06-30 | 2011-05-09 | 주식회사 하이닉스반도체 | Phase Change Memory Device Being Able to Improve Resistance of Word Line, Layout Structure of The Same, and Method of Manufacturing The Same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6127636A (en) * | 1984-07-17 | 1986-02-07 | Nec Corp | Dry etching process |
-
1987
- 1987-07-27 JP JP62185384A patent/JP2563180B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6127636A (en) * | 1984-07-17 | 1986-02-07 | Nec Corp | Dry etching process |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59148153A (en) * | 1983-02-14 | 1984-08-24 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Optical information recording reader |
JPH04132220A (en) * | 1990-09-21 | 1992-05-06 | Tokyo Ohka Kogyo Co Ltd | Plasma taper etching method |
JP2005159368A (en) * | 2003-11-27 | 2005-06-16 | Samsung Sdi Co Ltd | Flat plate display device |
US7936125B2 (en) | 2003-11-27 | 2011-05-03 | Samsung Mobile Display Co., Ltd. | Flat panel display |
Also Published As
Publication number | Publication date |
---|---|
JP2563180B2 (en) | 1996-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |