JPS5797643A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5797643A
JPS5797643A JP17433280A JP17433280A JPS5797643A JP S5797643 A JPS5797643 A JP S5797643A JP 17433280 A JP17433280 A JP 17433280A JP 17433280 A JP17433280 A JP 17433280A JP S5797643 A JPS5797643 A JP S5797643A
Authority
JP
Japan
Prior art keywords
film
oxide film
separate oxide
separate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17433280A
Other languages
Japanese (ja)
Inventor
Kenji Kawakita
Tsutomu Fujita
Hiroyuki Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17433280A priority Critical patent/JPS5797643A/en
Publication of JPS5797643A publication Critical patent/JPS5797643A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To prevent short circuit or a disconnection of electrode wiring due to step formations on the surface of a separate oxide film by forming multi-crystal semiconductor film on the separate oxide film and oxiding the semiconductor film and forming the separate oxide film with a flat surface. CONSTITUTION:A selective oxide mask pattern is formed on a semiconductor silicon substrate 1. Then a separate oxide film 6 is formed by a selective oxidation and a surface nitride film 3 is removed. A layer 8 is oxidized by depositing a polysilicon film 8 on the film 6 by the pressure reducing CVD method. A recess 7 on the film 6 is thus covered reducing the level differences of the film 8.
JP17433280A 1980-12-10 1980-12-10 Manufacture of semiconductor device Pending JPS5797643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17433280A JPS5797643A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17433280A JPS5797643A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5797643A true JPS5797643A (en) 1982-06-17

Family

ID=15976783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17433280A Pending JPS5797643A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797643A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100245087B1 (en) * 1996-12-26 2000-03-02 김영환 Method of forming an element isolation film in a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100245087B1 (en) * 1996-12-26 2000-03-02 김영환 Method of forming an element isolation film in a semiconductor device

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