JPS5797643A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5797643A JPS5797643A JP17433280A JP17433280A JPS5797643A JP S5797643 A JPS5797643 A JP S5797643A JP 17433280 A JP17433280 A JP 17433280A JP 17433280 A JP17433280 A JP 17433280A JP S5797643 A JPS5797643 A JP S5797643A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- separate oxide
- separate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To prevent short circuit or a disconnection of electrode wiring due to step formations on the surface of a separate oxide film by forming multi-crystal semiconductor film on the separate oxide film and oxiding the semiconductor film and forming the separate oxide film with a flat surface. CONSTITUTION:A selective oxide mask pattern is formed on a semiconductor silicon substrate 1. Then a separate oxide film 6 is formed by a selective oxidation and a surface nitride film 3 is removed. A layer 8 is oxidized by depositing a polysilicon film 8 on the film 6 by the pressure reducing CVD method. A recess 7 on the film 6 is thus covered reducing the level differences of the film 8.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17433280A JPS5797643A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17433280A JPS5797643A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5797643A true JPS5797643A (en) | 1982-06-17 |
Family
ID=15976783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17433280A Pending JPS5797643A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5797643A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100245087B1 (en) * | 1996-12-26 | 2000-03-02 | 김영환 | Method of forming an element isolation film in a semiconductor device |
-
1980
- 1980-12-10 JP JP17433280A patent/JPS5797643A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100245087B1 (en) * | 1996-12-26 | 2000-03-02 | 김영환 | Method of forming an element isolation film in a semiconductor device |
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