JPS6477961A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6477961A
JPS6477961A JP23365987A JP23365987A JPS6477961A JP S6477961 A JPS6477961 A JP S6477961A JP 23365987 A JP23365987 A JP 23365987A JP 23365987 A JP23365987 A JP 23365987A JP S6477961 A JPS6477961 A JP S6477961A
Authority
JP
Japan
Prior art keywords
layer
contact
hole
etching
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23365987A
Other languages
Japanese (ja)
Inventor
Takaaki Suzuki
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23365987A priority Critical patent/JPS6477961A/en
Publication of JPS6477961A publication Critical patent/JPS6477961A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To make it possible for two conductive layers interposing an insulating layer to be brought into contact with each other without requiring a surplus space, by forming a communicating hole, which communicate the first or the second conductive layer and an intermediate insulating layer, and forming the third conductive layer followed by etching the third conductive layer excepting the inside of the communicating hole. CONSTITUTION:An SiO2 layer 2, an Al layer 3 and a PSG layer 4 are formed on a silicon substrate 1, further a resist pattern 5 is selectively formed on the PSG layer 4 so as to provide an opening. Next, a contact hole 6 is formed by plasma-etching of each layer respectively. Then, a polycrystalline silicon layer 7 is formed by a CVD method for burying the hole. Next, plasma etching is performed on polycrystalline silicon excepting the contact hole with a substance of a hydrogen fluoride system in order to connect the Al layer to the silicon substrate 1. Width of the polycrystalline silicon layer 7 for contact can be integrated without requiring a surplus space.
JP23365987A 1987-09-19 1987-09-19 Manufacture of semiconductor device Pending JPS6477961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23365987A JPS6477961A (en) 1987-09-19 1987-09-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23365987A JPS6477961A (en) 1987-09-19 1987-09-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6477961A true JPS6477961A (en) 1989-03-23

Family

ID=16958514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23365987A Pending JPS6477961A (en) 1987-09-19 1987-09-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6477961A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01206650A (en) * 1988-02-13 1989-08-18 Toshiba Corp Manufacture of semiconductor device
JPH0268952A (en) * 1988-09-02 1990-03-08 Toshiba Corp Semiconductor device and manufacture thereof
JPH02220462A (en) * 1989-02-21 1990-09-03 Takehide Shirato Semiconductor device
JPH0653327A (en) * 1992-06-16 1994-02-25 Hyundai Electron Ind Co Ltd Contact of semiconductor element and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01206650A (en) * 1988-02-13 1989-08-18 Toshiba Corp Manufacture of semiconductor device
JPH0268952A (en) * 1988-09-02 1990-03-08 Toshiba Corp Semiconductor device and manufacture thereof
JPH02220462A (en) * 1989-02-21 1990-09-03 Takehide Shirato Semiconductor device
JPH0653327A (en) * 1992-06-16 1994-02-25 Hyundai Electron Ind Co Ltd Contact of semiconductor element and its manufacture

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