JPS6477961A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6477961A JPS6477961A JP23365987A JP23365987A JPS6477961A JP S6477961 A JPS6477961 A JP S6477961A JP 23365987 A JP23365987 A JP 23365987A JP 23365987 A JP23365987 A JP 23365987A JP S6477961 A JPS6477961 A JP S6477961A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- contact
- hole
- etching
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To make it possible for two conductive layers interposing an insulating layer to be brought into contact with each other without requiring a surplus space, by forming a communicating hole, which communicate the first or the second conductive layer and an intermediate insulating layer, and forming the third conductive layer followed by etching the third conductive layer excepting the inside of the communicating hole. CONSTITUTION:An SiO2 layer 2, an Al layer 3 and a PSG layer 4 are formed on a silicon substrate 1, further a resist pattern 5 is selectively formed on the PSG layer 4 so as to provide an opening. Next, a contact hole 6 is formed by plasma-etching of each layer respectively. Then, a polycrystalline silicon layer 7 is formed by a CVD method for burying the hole. Next, plasma etching is performed on polycrystalline silicon excepting the contact hole with a substance of a hydrogen fluoride system in order to connect the Al layer to the silicon substrate 1. Width of the polycrystalline silicon layer 7 for contact can be integrated without requiring a surplus space.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23365987A JPS6477961A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23365987A JPS6477961A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477961A true JPS6477961A (en) | 1989-03-23 |
Family
ID=16958514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23365987A Pending JPS6477961A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477961A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01206650A (en) * | 1988-02-13 | 1989-08-18 | Toshiba Corp | Manufacture of semiconductor device |
JPH0268952A (en) * | 1988-09-02 | 1990-03-08 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH02220462A (en) * | 1989-02-21 | 1990-09-03 | Takehide Shirato | Semiconductor device |
JPH0653327A (en) * | 1992-06-16 | 1994-02-25 | Hyundai Electron Ind Co Ltd | Contact of semiconductor element and its manufacture |
-
1987
- 1987-09-19 JP JP23365987A patent/JPS6477961A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01206650A (en) * | 1988-02-13 | 1989-08-18 | Toshiba Corp | Manufacture of semiconductor device |
JPH0268952A (en) * | 1988-09-02 | 1990-03-08 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH02220462A (en) * | 1989-02-21 | 1990-09-03 | Takehide Shirato | Semiconductor device |
JPH0653327A (en) * | 1992-06-16 | 1994-02-25 | Hyundai Electron Ind Co Ltd | Contact of semiconductor element and its manufacture |
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