JPH0268952A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH0268952A
JPH0268952A JP22022288A JP22022288A JPH0268952A JP H0268952 A JPH0268952 A JP H0268952A JP 22022288 A JP22022288 A JP 22022288A JP 22022288 A JP22022288 A JP 22022288A JP H0268952 A JPH0268952 A JP H0268952A
Authority
JP
Japan
Prior art keywords
film
layer
contact hole
wiring
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22022288A
Other languages
Japanese (ja)
Inventor
Shoichi Kagami
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22022288A priority Critical patent/JPH0268952A/en
Publication of JPH0268952A publication Critical patent/JPH0268952A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable contact between a wiring suitable for high integration and a semiconductor substrate to be formed without allowing device characteristics and reliability from being reduced even if an integrated circuit is miniaturized by providing a conductive layer which is embedded within a contact hole of an insulation film and is connected by a wiring layer and side surfaces.
CONSTITUTION: A wiring layer 25 formed on insulation films 22 and 24 on a semiconductor substrate 21 and a conductor layer 27 which is joined to the above wiring layer 25 embedded within a contact hole 27 of the above insulation films 22 and 24 at both side surfaces. For example, an element separation area (insulation film) 22 is selectively formed on the main surface of a P-type silicon substrate 21 and As ion is implanted into the surface area of the silicon substrate 21 for forming a high. concentration impurity layer 23. Then, after allowing the CVD-SiO2 film 24 to be subject to accumulation formation as an interlayer insulation film, an Al-Si layer is formed by skuttering and the wiring 25 is formed by patterning. Then, a plasma SiO2 film 26 is formed and the contact hole 27' is formed. Then, the CVD-W film 27 is subject to embedded formation to the contact hole 27'.
COPYRIGHT: (C)1990,JPO&Japio
JP22022288A 1988-09-02 1988-09-02 Semiconductor device and manufacture thereof Pending JPH0268952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22022288A JPH0268952A (en) 1988-09-02 1988-09-02 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22022288A JPH0268952A (en) 1988-09-02 1988-09-02 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH0268952A true JPH0268952A (en) 1990-03-08

Family

ID=16747792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22022288A Pending JPH0268952A (en) 1988-09-02 1988-09-02 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH0268952A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536623A (en) * 1991-07-29 1993-02-12 Nec Kyushu Ltd Manufacture of semiconductor device
JPH08186171A (en) * 1994-12-28 1996-07-16 Nec Corp Semiconductor device and manufacture thereof
US5594278A (en) * 1994-04-22 1997-01-14 Nippon Steel Corporation Semiconductor device having a via hole with an aspect ratio of not less than four, and interconnections therein

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200541A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Semiconductor device
JPS62118543A (en) * 1985-11-18 1987-05-29 Nec Corp Semiconductor integrated circuit device
JPS63127551A (en) * 1986-11-17 1988-05-31 Toshiba Corp Manufacture of semiconductor device
JPS6477961A (en) * 1987-09-19 1989-03-23 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200541A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Semiconductor device
JPS62118543A (en) * 1985-11-18 1987-05-29 Nec Corp Semiconductor integrated circuit device
JPS63127551A (en) * 1986-11-17 1988-05-31 Toshiba Corp Manufacture of semiconductor device
JPS6477961A (en) * 1987-09-19 1989-03-23 Fujitsu Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536623A (en) * 1991-07-29 1993-02-12 Nec Kyushu Ltd Manufacture of semiconductor device
US5594278A (en) * 1994-04-22 1997-01-14 Nippon Steel Corporation Semiconductor device having a via hole with an aspect ratio of not less than four, and interconnections therein
US5710060A (en) * 1994-04-22 1998-01-20 Nippon Steel Corporation Method of forming wiring using sputtered insulating mask
JPH08186171A (en) * 1994-12-28 1996-07-16 Nec Corp Semiconductor device and manufacture thereof

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